BSS169H6327XTSA1 - 100V N-Ch Depletion MOSFET 170mA | Infineon
MPN: BSS169H6327XTSA1 β Active| Qty | Unit Price | Extended |
|---|---|---|
| 1 | $0.42 | $0.42 |
| 10 | $0.38 | $3.80 |
| 100 | $0.31 | $31.00 |
| 500 | $0.24 | $120.00 |
| 1,000 | $0.19 | $190.00 |
| 3,000 | $0.15 | $450.00 |
Drop-in alternatives for BSS169H6327XTSA1 β same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.
Quick Comparison Tool β Select alternative parts for side-by-side comparison:
BSS139H6327XTSA1
β Drop-Inπ Reference alternative (not in catalog)
BSS169H6327XTSA2
β Drop-Inπ Reference alternative (not in catalog)
BSS169 L6327
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSS83 H6327
β Drop-In β οΈ εζ°εΎ ιͺθ―π Reference alternative (not in catalog)
BSS84 H6327
β Drop-Inπ Reference alternative (not in catalog)
2N7002L
β Drop-Inβ In Stock
$0.025 / Unit
View Datasheet βBSS169H6327XTSA1 Maximum Ratings & Electrical Characteristics
| FET Type | N-Channel Depletion Mode |
| Drain-to-Source Voltage (VDS) | 100 V |
| Continuous Drain Current (ID) | 170 mA (Ta) |
| Power Dissipation (PD) | 360 mW (Ta) |
| RDS(on) Maximum | 6 Ohm at VGS=0 V |
| Gate Threshold Voltage (VGS(th)) | Pinch-off approx. -3.5 V (typical) |
| Package | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount |
| Pin Count | 3 |
| MSL Level | 1 (per JEDEC J-STD-020) |
| RoHS Status | Compliant |
| Lead-Free | Yes |
| Technology | Depletion-mode vertical DMOS |
| Drain Current at 25C | 170 mA continuous |
BSS169H6327XTSA1 Pin Configuration
| Pin 1 | Gate β Gate input; bias below pinch-off (~-3.5 V) to turn off |
| Pin 2 | Source β Source terminal; typically tied to circuit reference |
| Pin 3 | Drain β Drain terminal; up to 100 V VDS rating |
Safe Operating Area (DC)
Typical Applications
BSS169H6327XTSA1 is suitable for 6 applications: Power Supply Startup Bypass, In-Rush Current Limiter, Over-Voltage Protection Crowbar, Off-Line Voltage Reference, Constant-Current Source, Normally-On Level Shifter.
Power Supply Startup Bypass
The BSS169H6327XTSA1's depletion-mode characteristic makes it ideal as a startup bypass element in switching power supplies, where it conducts at VGS=0 to provide initial power to the SMPS controller before the auxiliary winding takes over. With 100 V VDS headroom and 170 mA continuous drain current, it comfortably handles the housekeeping current of small flyback or buck converters during the first switching cycles. The 6 Ohm RDS(on) at zero gate bias limits inrush, and once the controller is powered it can pull the gate below pinch-off to fully disable the BSS169 for normal operation.
Recommended
In-Rush Current Limiter
The BSS169H6327XTSA1 serves as a self-biased in-rush current limiter at the input of hot-plug DC rails (24 V industrial, 48 V telecom). Its normally-on channel with 6 Ohm RDS(on) limits the initial charging current of bulk output capacitors when a card is plugged into a live backplane. As the rail stabilizes, the controller can bias the gate below pinch-off to fully open the channel for minimum loss. The 100 V VDS rating handles transient spikes common in 24 V industrial environments without avalanche breakdown.
Recommended
Over-Voltage Protection Crowbar
In over-voltage protection circuits, the BSS169H6327XTSA1 acts as a normally-on pass element that conducts during normal operation and is biased off by a sense circuit when an over-voltage event is detected. When paired with a comparator that drives the gate to pinch-off at a defined threshold, the BSS169 disconnects the load within microseconds, protecting downstream components from sustained over-voltage stress. Its 100 V VDS rating makes it suitable for crowbar protection on 24 V and 48 V rails.
Recommended
Off-Line Voltage Reference
The depletion-mode BSS169H6327XTSA1 is well-suited to off-line voltage-reference circuits where a small constant current must flow from a high-voltage rail to a precision shunt reference such as a TL431. The always-on channel with predictable RDS(on) provides a defined current path without requiring a powered controller to bias the gate. This simplifies offline auxiliary supplies and self-powered gate-drive bias networks in SMPS designs.
Recommended
Constant-Current Source
The BSS169H6327XTSA1's depletion-mode characteristic and stable pinch-off curve enable simple two-terminal constant-current source circuits. By tying gate to source through a resistor and operating the device in saturation, a fixed drain current can be set over a wide range of drain voltages. This is useful for LED biasing, loop-powered transducer excitation, and biasing of precision analog stages where a stable current reference is required from a varying supply.
Recommended
Normally-On Level Shifter
In industrial and telecom interfaces, the BSS169H6327XTSA1 functions as a normally-on level shifter between a high-voltage domain (24 V or 48 V) and a low-voltage logic or microcontroller domain. Because the device conducts at VGS=0, a simple resistor divider on the gate is enough to define the OFF state for the low-voltage side, eliminating the need for an additional gate-drive supply. The 100 V VDS rating tolerates transients on the high-voltage rail without failure.
Recommended
Recommended Products Summary
Engineering reference data for BSS169H6327XTSA1 β comparison, design guidance, and compliance information.
Selection Guide
Comparison with Alternatives
| Parameter | This Product | BSS139H6327XTSA1 | BSS169H6327XTSA2 | BSS169 L6327 | BSS83 H6327 | 2N7002 |
|---|---|---|---|---|---|---|
| Brand | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | Infineon Technologies | onsemi |
| Package | PG-SOT23 (SOT-23-3) | PG-SOT23 (SOT-23-3) - same | PG-SOT23 (SOT-23-3) - same | PG-SOT23 (SOT-23-3) - same | PG-SOT23 (SOT-23-3) - same | SOT-23-3 - same |
| FET Type | N-Channel Depletion Mode | N-Channel Depletion Mode | N-Channel Depletion Mode | N-Channel Depletion Mode | N-Channel Depletion Mode | N-Channel Enhancement Mode |
| VDS Max | 100 V | 60 V | 100 V | 100 V | 60 V | 60 V |
| Continuous Drain Current (Ta) | 170 mA | 240 mA | 170 mA | 170 mA | 100 mA | 115 mA |
| RDS(on) Max | 6 Ohm | 10 Ohm | 6 Ohm | 6 Ohm | 10 Ohm | 7.5 Ohm at VGS=10V |
| Power Dissipation | 360 mW | 360 mW | 360 mW | 360 mW | 360 mW | 200 mW |
| VGS(th) / Pinch-Off | -3.5 V (typical pinch-off) | -3.5 V (typical pinch-off) | -3.5 V (typical pinch-off) | -3.5 V (typical pinch-off) | -3.5 V (typical pinch-off) | +1 to +2.5 V (enhancement threshold) |
| Pinout (G/S/D) | 1-G, 2-S, 3-D | 1-G, 2-S, 3-D | 1-G, 2-S, 3-D | 1-G, 2-S, 3-D | 1-G, 2-S, 3-D | 1-G, 2-S, 3-D |
Key Differentiators
- One of the few depletion-mode small-signal MOSFETs in volume production (vs 2N7002)
- Higher 100 V VDS rating than the BSS139 family (vs BSS139H6327XTSA1)
- Pin-compatible with standard SOT-23 small-signal MOSFETs (vs BSS83 H6327)
Design Notes
Because the BSS169H6327XTSA1 is depletion-mode and ON at VGS=0, it cannot be turned off by leaving the gate floating. Always provide a defined gate bias path - either a resistor to a known voltage or a zener clamp - to guarantee the desired OFF state during power-up and fault conditions. A floating gate can pick up noise and create undefined conduction states.
Estimated: at VDS=24 V, ID=170 mA continuous, RDS(on)=6 Ohm, the steady-state dissipation is approximately P = ID^2 * RDS(on) = 0.17^2 * 6 = 0.17 W, well within the 360 mW rating at 25C. However at 100 V VDS with the same current, designers must use pulsed operation or significantly derate for ambient temperature. The SOT-23 package has limited thermal headroom - check the SOA graph before operating at peak VDS and ID simultaneously.
Use a small copper pour under and around the drain pad to spread heat. Keep gate traces short and away from drain/source switching nodes to minimize parasitic coupling. For depletion-mode designs where the gate is biased through a high-impedance divider, add a 100 nF ceramic bypass between gate and source to shunt high-frequency noise that could otherwise modulate the channel.
In level-shifter or startup-bypass applications, the gate-source capacitance (Ciss) of the BSS169H6327XTSA1 can couple drain transients back to the gate through the Miller effect. A gate-source resistor of 100 kOhm to 1 MOhm helps discharge Ciss and stabilizes the OFF state during fast drain edges. Verify gate-bias network bandwidth against the fastest expected drain transition.
Compliance Information
RoHS and REACH compliance per Infineon product page. Not AEC-Q100 qualified; this part is intended for industrial and consumer applications, not automotive. Lead-free reflow-compatible per MSL1 rating.
