BSS816NWH6327XTSA1 vs BSS123NH6327XTSA1 Comparison
Detailed side-by-side comparison of BSS816NWH6327XTSA1 by Infineon and BSS123NH6327XTSA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSS816NWH6327XTSA1
BSS816NWH6327XTSA1 - 20V 1.4A N-Ch OptiMOS MOSFET | Infineon
BSS816NWH6327XTSA1 β Active
Specification Comparison
| Parameter | BSS816NWH6327XTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.14 | $0.09 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | β |
| Transistor Type | MOSFET, N-Channel | β |
| Drain-Source Voltage (VDS) | 20 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | β |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | β |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: typical and max VGS(th)] |
| RDS(on) max @ VGS=4.5V | 160 mOhm | β |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | β |
| Power Dissipation (PD) at TA=25C | 500 mW | β |
| Operating Temperature Range | -55C to +150C | -55 Β°C to +150 Β°C (junction) |
| Package | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| Mounting Type | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (automotive) |
| Technology | OptiMOS 2 trench MOSFET | β |
| ESD Protection | Yes (integrated, per Infineon datasheet) | β |
| RoHS / Lead-Free | RoHS compliant, lead-free | β |
| MSL Level | 1 | 1 (per JEDEC J-STD-020) |
| Part Number | β | BSS123NH6327XTSA1 |
| Part Status | β | Active |
| FET Type | β | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) | β | 190 mA (Ta) |
| Power Dissipation (PD) | β | 500 mW (Ta) |
| RDS(on) Max | β | 6 Ξ© @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | β | Β±20 V |
| RoHS Compliance | β | Yes (Pb-free lead plating) |