BSS816NWH6327XTSA1 vs BSS123NH6327XTSA1 Karşılaştırma
Ayrıntılı yan yana karşılaştırma BSS816NWH6327XTSA1 tarafından Infineon ve BSS123NH6327XTSA1 tarafından InfineonAnahtar özellikleri, elektriksel parametreleri, ambalajı, yaşam döngüsü durumu, fiyatlandırma ve mevcudiyeti karşılaştırarak tasarım gereksinimleriniz için en iyi bileşeni belirleyin.
Özellik Karşılaştırması
| Parametre | BSS816NWH6327XTSA1 | BSS123NH6327XTSA1 |
|---|---|---|
| Marka | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Yaşam Döngüsü Durumu | Aktif | Aktif |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Family | BSS816NW (OptiMOS 2 Small-Signal) | — |
| Transistor Türü | MOSFET, N-Channel | — |
| Drain-Source Voltage (VDS) | 20 V | 100 V |
| Continuous Drain Current (ID) at TA=25C | 1.4 A | — |
| Pulsed Drain Current (IDM) | [DATA_NEEDED: pulsed drain current] | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typ/min/max] | [DATA_NEEDED: typical and max VGS(th)] |
| RDS(on) max @ VGS=4.5V | 160 mOhm | — |
| RDS(on) max @ VGS=2.5V | [DATA_NEEDED: RDS(on) at 2.5V] | — |
| Power Dissipation (PD) at TA=25C | 500 mW | — |
| İşletim Sıcaklığı Aralığı | -55C to +150C | -55 °C to +150 °C (junction) |
| Paket | SOT-323 (PG-SOT323), 3-pin | PG-SOT23 (SOT-23-3) |
| Montaj Türü | Surface Mount | Surface Mount |
| Qualification | AEC-Q101 (Automotive) | AEC-Q101 (automotive) |
| Technology | OptiMOS 2 trench MOSFET | — |
| ESD Protection | Yes (integrated, per Infineon datasheet) | — |
| RoHS / Lead-Free | RoHS compliant, lead-free | — |
| MSL Seviyesi | 1 | 1 (per JEDEC J-STD-020) |
| Part Number | — | BSS123NH6327XTSA1 |
| Part Status | — | Active |
| FET Type | — | N-Channel, Enhancement Mode |
| Continuous Drain Current (ID) | — | 190 mA (Ta) |
| Power Dissipation (PD) | — | 500 mW (Ta) |
| RDS(on) Max | — | 6 Ω @ VGS = 10 V |
| Gate-Source Voltage Max (VGS) | — | ±20 V |
| RoHS Compliance | — | Yes (Pb-free lead plating) |