BSZ011NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Comparison

Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSZ036NE2LSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ011NE2LS5IATMA1

BSZ011NE2LS5IATMA1 - 25V 1.1mΞ© OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 βœ“ Active
Infineon
BSZ036NE2LSATMA1

BSZ036NE2LSATMA1 - 25V N-Channel OptiMOS Power MOSFET | Infineon

BSZ036NE2LSATMA1 βœ“ Active

Specification Comparison

Parameter BSZ011NE2LS5IATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.55 $0.42
FET Type N-Channel β€”
Technology OptiMOS 5 (Trench) β€”
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25Β°C 35 A β€”
Continuous Drain Current (ID) at TC=25Β°C 40 A β€”
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΞ© (typical, per datasheet title) β€”
Power Dissipation at TA=25Β°C 2.1 W β€”
Power Dissipation at TC=25Β°C 69 W β€”
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) β€”
Gate Drive Voltage (recommended) 4.5 V to 10 V β€”
Operating Temperature Range -55Β°C to +150Β°C -55C to +150C
Package PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Mounting Type Surface Mount Surface Mount
MSL Level MSL1 (per JEDEC J-STD-020) 1 (Unlimited)
RoHS Status Compliant Compliant
Lead-Free Yes Yes
Halogen-Free Yes β€”
Manufacturer β€” Infineon Technologies
Product Family β€” OptiMOS 25V
Polarity / Channel Type β€” N-Channel
Continuous Drain Current (ID) at TA=25C β€” 16 A
Continuous Drain Current (ID) at TC=25C β€” 40 A
Power Dissipation (PD) at TA=25C β€” 2.1 W
Power Dissipation (PD) at TC=25C β€” 37 W
Configuration β€” Single
Gate Drive β€” Logic-level compatible

Datasheets & Resources

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