BSZ011NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Perbandingan

Perbandingan bersamaan detil BSZ011NE2LS5IATMA1 dari Infineon dan BSZ036NE2LSATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ011NE2LS5IATMA1 BSZ036NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (Trench) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25°C 35 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 69 W —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) —
Gate Drive Voltage (recommended) 4.5 V to 10 V —
Rentang Suhu Kerja -55°C to +150°C -55C to +150C
Paket PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Level MSL MSL1 (per JEDEC J-STD-020) 1 (Unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Bebas Halogen Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Gate Drive — Logic-level compatible

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