BSZ011NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Ikinahambing

Detalyadong pagkakahiwalay na pagkakahambing ng BSZ011NE2LS5IATMA1 sa pamamagitan ng Infineon at BSZ036NE2LSATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.

Infineon
BSZ011NE2LS5IATMA1 BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon

BSZ011NE2LS5IATMA1 ✓ Nakahanda

Pagsanggunian na paghahambing

Parametro BSZ011NE2LS5IATMA1 BSZ036NE2LSATMA1
Brand Infineon Infineon
Kategorya MOSFETs MOSFETs
Katayuan ng Lifecycle Aktibo Aktibo
FET Type N-Channel —
Technology OptiMOS 5 (Trench) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25°C 35 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 69 W —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) —
Gate Drive Voltage (recommended) 4.5 V to 10 V —
Hanay ng Temperature na Operasyon -55°C to +150°C -55C to +150C
Packhaging PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Uri ng Pagpapasok Surface Mount Surface Mount
Level ng MSL MSL1 (per JEDEC J-STD-020) 1 (Unlimited)
Tindminan RoHS Compliant Compliant
Lead-Free Yes Yes
Wala sa Halogen Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Gate Drive — Logic-level compatible

Mga Datasheets at Resources

Tingnan ang Lahat ng mga Produkto Lumikha ng BOM Hilingin ang Kita