BSZ011NE2LS5IATMA1 vs BSZ036NE2LSATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ011NE2LS5IATMA1 disebabkan oleh Infineon dan BSZ036NE2LSATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ011NE2LS5IATMA1 BSZ036NE2LSATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
FET Type N-Channel —
Technology OptiMOS 5 (Trench) —
Drain-Source Voltage (VDS) 25 V 25 V
Continuous Drain Current (ID) at TA=25°C 35 A —
Continuous Drain Current (ID) at TC=25°C 40 A —
On-State Resistance RDS(on) max at VGS=10 V 1.1 mΩ (typical, per datasheet title) —
Power Dissipation at TA=25°C 2.1 W —
Power Dissipation at TC=25°C 69 W —
Gate Threshold Voltage VGS(th) 1.0 V to 2.0 V (typical 1.5 V) —
Gate Drive Voltage (recommended) 4.5 V to 10 V —
Gambaran Suhu Operasi -55°C to +150°C -55C to +150C
Kemasan PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) PG-TSDSON-8-FL (5x6 mm)
Jenis Pemasangan Surface Mount Surface Mount
Aras MSL MSL1 (per JEDEC J-STD-020) 1 (Unlimited)
Status RoHS Compliant Compliant
Lead-Free Yes Yes
Boson Bebas Yes —
Manufacturer — Infineon Technologies
Product Family — OptiMOS 25V
Polarity / Channel Type — N-Channel
Continuous Drain Current (ID) at TA=25C — 16 A
Continuous Drain Current (ID) at TC=25C — 40 A
Power Dissipation (PD) at TA=25C — 2.1 W
Power Dissipation (PD) at TC=25C — 37 W
Configuration — Single
Gate Drive — Logic-level compatible

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga