BSZ011NE2LS5IATMA1 vs BSZ065N06LS5ATMA1 Comparison
Detailed side-by-side comparison of BSZ011NE2LS5IATMA1 by Infineon and BSZ065N06LS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ011NE2LS5IATMA1
BSZ011NE2LS5IATMA1 - 25V 1.1mΩ OptiMOS 5 N-MOSFET | Infineon
BSZ011NE2LS5IATMA1 ✓ ActiveInfineon
BSZ065N06LS5ATMA1
BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon
BSZ065N06LS5ATMA1 ✓ ActiveSpecification Comparison
| Parameter | BSZ011NE2LS5IATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.55 | $0.62 |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Operating Temperature Range | -55°C to +150°C | -55°C to +150°C |
| Package | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Mounting Type | Surface Mount | Surface Mount |
| MSL Level | MSL1 (per JEDEC J-STD-020) | — |
| RoHS Status | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen-Free | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Transistor Type | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |