BSZ011NE2LS5IATMA1 vs BSZ065N06LS5ATMA1 Pengandingan
Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ011NE2LS5IATMA1 disebabkan oleh Infineon dan BSZ065N06LS5ATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.
Pengandingan Spesifikasi
| Parametr | BSZ011NE2LS5IATMA1 | BSZ065N06LS5ATMA1 |
|---|---|---|
| Merek | Infineon | Infineon |
| Kategori | MOSFETs | MOSFETs |
| Status Lingkungan Hidup | Aktif | Aktif |
| FET Type | N-Channel | — |
| Technology | OptiMOS 5 (Trench) | OptiMOS™ 5 logic-level |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at TA=25°C | 35 A | — |
| Continuous Drain Current (ID) at TC=25°C | 40 A | — |
| On-State Resistance RDS(on) max at VGS=10 V | 1.1 mΩ (typical, per datasheet title) | — |
| Power Dissipation at TA=25°C | 2.1 W | — |
| Power Dissipation at TC=25°C | 69 W | — |
| Gate Threshold Voltage VGS(th) | 1.0 V to 2.0 V (typical 1.5 V) | — |
| Gate Drive Voltage (recommended) | 4.5 V to 10 V | — |
| Gambaran Suhu Operasi | -55°C to +150°C | -55°C to +150°C |
| Kemasan | PG-TSDSON-8-34 (PQFN 3.3x3.3 mm) | PG-TSDSON-8-FL (PQFN 3.3 x 3.3) |
| Jenis Pemasangan | Surface Mount | Surface Mount |
| Aras MSL | MSL1 (per JEDEC J-STD-020) | — |
| Status RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Boson Bebas | Yes | — |
| Manufacturer | — | Infineon Technologies |
| Series | — | OptiMOS™ 5 |
| Jenis Transistor | — | N-Channel MOSFET |
| Drain-Source Voltage (VDS) Max | — | 60 V |
| Continuous Drain Current (ID) Max | — | 65 A |
| Drain Current @ Tc (ID, Tc=25°C) | — | 40 A |
| On-Resistance RDS(on) Max @ VGS=10V | — | 6.5 mΩ |
| Power Dissipation (PD) Max | — | 46 W |
| Gate Threshold Voltage (VGS(th)) | — | 2.3 V |
| Total Gate Charge (Qg) | — | 13 nC @ VGS=4.5 V |
| Input Capacitance (Ciss) | — | 1.8 nF |