BSZ018NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Comparison

Detailed side-by-side comparison of BSZ018NE2LSIATMA1 by Infineon and BSC015NE2LS5IATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter BSZ018NE2LSIATMA1 BSC015NE2LS5IATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Operating Temperature Range -55 C to +150 C -55C to +150C (junction)
Package PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TDSON-8-6 (SuperSO8 5x6)
Mounting Type Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) OptiMOS 5 trench
RoHS Status Compliant Compliant
Lead-Free Yes —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Pin Count — 8
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]
MSL Level — 1 (per JEDEC J-STD-020)

Datasheets & Resources

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