BSZ018NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Perbandingan

Perbandingan bersamaan detil BSZ018NE2LSIATMA1 dari Infineon dan BSC015NE2LS5IATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ018NE2LSIATMA1 BSC015NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Rentang Suhu Kerja -55 C to +150 C -55C to +150C (junction)
Paket PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TDSON-8-6 (SuperSO8 5x6)
Tipe Mounting Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) OptiMOS 5 trench
Status RoHS Compliant Compliant
Lead-Free Yes —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Jumlah Pin — 8
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]
Level MSL — 1 (per JEDEC J-STD-020)

Spek dan Sumber

Buka Semua Produk Buat BOM Ajukan Diskon