BSZ018NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ018NE2LSIATMA1 sa pamamagitan ng Infineon at BSC015NE2LS5IATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ018NE2LSIATMA1 - 25V N-Ch OptiMOS 1.8mOhm MOSFET | Infineon
BSZ018NE2LSIATMA1 ✓ NakahandaInfineon
BSC015NE2LS5IATMA1 - 25V OptiMOS 5 N-Channel MOSFET | Infineon
BSC015NE2LS5IATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ018NE2LSIATMA1 | BSC015NE2LS5IATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Part Number | BSZ018NE2LSIATMA1 | — |
| Channel Type | N-Channel | — |
| Drain-Source Voltage (VDS) | 25 V | — |
| Continuous Drain Current (ID) at Ta=25C | 22 A | — |
| Continuous Drain Current (ID) at Tc=25C | 40 A | — |
| Pulsed Drain Current (IDM) | 160 A | — |
| Typical On-Resistance RDS(on) at VGS=10V | 1.8 mOhm | — |
| Gate-Source Voltage (VGS) max | [DATA_NEEDED: VGS max rating] | — |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: VGS(th) typical] | — |
| Power Dissipation at Ta=25C | 2.1 W | — |
| Power Dissipation at Tc=25C | 69 W | — |
| Hanay ng Temperature na Operasyon | -55 C to +150 C | -55C to +150C (junction) |
| Packhaging | PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) | PG-TDSON-8-6 (SuperSO8 5x6) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Technology | OptiMOS (Infineon trench MOSFET) | OptiMOS 5 trench |
| Tindminan RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Product Family | — | OptiMOS 5 25V |
| Polarity / Channel Type | — | N-Channel |
| Drain-Source Voltage (VDS) Max | — | 25 V |
| Continuous Drain Current (ID) at Ta | — | 33 A |
| Continuous Drain Current (ID) at Tc | — | 100 A |
| On-Resistance RDS(on) Max at VGS=10V | — | 1.5 mOhm |
| Power Dissipation at Ta | — | 2.5 W |
| Power Dissipation at Tc | — | 50 W |
| Bilang ng Pin | — | 8 |
| Gate Threshold Voltage VGS(th) Typ | — | [DATA_NEEDED: VGS(th) typical value] |
| Total Gate Charge Qg Typ | — | [DATA_NEEDED: Qg typical value] |
| Level ng MSL | — | 1 (per JEDEC J-STD-020) |