BSZ018NE2LSIATMA1 vs BSC015NE2LS5IATMA1 Pengandingan

Pengandingan Sisi Kiri Sisi Kanan Terperinci BSZ018NE2LSIATMA1 disebabkan oleh Infineon dan BSC015NE2LS5IATMA1 disebabkan oleh Infineon. Bandingkan spesifikasi utama, parameter elektrik, pakej, status kehidupan, harga, dan keupayaan untuk menentukan komponen terbaik untuk keperluan disenjaya anda.

Pengandingan Spesifikasi

Parametr BSZ018NE2LSIATMA1 BSC015NE2LS5IATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Part Number BSZ018NE2LSIATMA1 —
Channel Type N-Channel —
Drain-Source Voltage (VDS) 25 V —
Continuous Drain Current (ID) at Ta=25C 22 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Pulsed Drain Current (IDM) 160 A —
Typical On-Resistance RDS(on) at VGS=10V 1.8 mOhm —
Gate-Source Voltage (VGS) max [DATA_NEEDED: VGS max rating] —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: VGS(th) typical] —
Power Dissipation at Ta=25C 2.1 W —
Power Dissipation at Tc=25C 69 W —
Gambaran Suhu Operasi -55 C to +150 C -55C to +150C (junction)
Kemasan PG-TSDSON-8-FL (8-pin TSDSON with exposed pad) PG-TDSON-8-6 (SuperSO8 5x6)
Jenis Pemasangan Surface Mount Surface Mount
Technology OptiMOS (Infineon trench MOSFET) OptiMOS 5 trench
Status RoHS Compliant Compliant
Lead-Free Yes —
Product Family — OptiMOS 5 25V
Polarity / Channel Type — N-Channel
Drain-Source Voltage (VDS) Max — 25 V
Continuous Drain Current (ID) at Ta — 33 A
Continuous Drain Current (ID) at Tc — 100 A
On-Resistance RDS(on) Max at VGS=10V — 1.5 mOhm
Power Dissipation at Ta — 2.5 W
Power Dissipation at Tc — 50 W
Kiraan Pin — 8
Gate Threshold Voltage VGS(th) Typ — [DATA_NEEDED: VGS(th) typical value]
Total Gate Charge Qg Typ — [DATA_NEEDED: Qg typical value]
Aras MSL — 1 (per JEDEC J-STD-020)

Laporan Datasheet & Sumber

Lihat Semua Produk Buat BOQ Minta Bao Harga