BSZ065N06LS5ATMA1 vs BSC0902NSATMA1 Comparison

Detailed side-by-side comparison of BSZ065N06LS5ATMA1 by Infineon and BSC0902NSATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ065N06LS5ATMA1

BSZ065N06LS5ATMA1 - 60V 65A OptiMOS 5 N-Ch MOSFET | Infineon

BSZ065N06LS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ065N06LS5ATMA1 BSC0902NSATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.62 $0.78
Manufacturer Infineon Technologies β€”
Series OptiMOSβ„’ 5 β€”
Transistor Type N-Channel MOSFET N-Channel MOSFET
Technology OptiMOSβ„’ 5 logic-level β€”
Drain-Source Voltage (VDS) Max 60 V β€”
Continuous Drain Current (ID) Max 65 A β€”
Drain Current @ Tc (ID, Tc=25Β°C) 40 A β€”
On-Resistance RDS(on) Max @ VGS=10V 6.5 mΞ© β€”
Power Dissipation (PD) Max 46 W β€”
Gate Threshold Voltage (VGS(th)) 2.3 V β€”
Total Gate Charge (Qg) 13 nC @ VGS=4.5 V β€”
Input Capacitance (Ciss) 1.8 nF β€”
Operating Temperature Range -55Β°C to +150Β°C -55C to +150C (Tj)
Package PG-TSDSON-8-FL (PQFN 3.3 x 3.3) PG-TDSON-8-6 (SuperSO8)
Mounting Type Surface Mount Surface Mount
RoHS Status Compliant β€”
Drain-Source Voltage (VDS) β€” 30 V
Continuous Drain Current (ID, Ta) β€” 24 A
Pulsed Drain Current (IDM, Tc) β€” 100 A
Power Dissipation (Ta) β€” 2.5 W
Power Dissipation (Tc) β€” 48 W
Gate Threshold Voltage (VGS(th) typ) β€” [DATA_NEEDED: VGS(th) typical value]
RDS(on) @ VGS=10V max β€” [DATA_NEEDED: RDS(on) at VGS=10V]
RDS(on) @ VGS=4.5V max β€” [DATA_NEEDED: RDS(on) at VGS=4.5V]
Total Gate Charge (Qg typ) β€” [DATA_NEEDED: Qg typical]
Qualification β€” JEDEC qualified for target applications
RoHS Compliance β€” Compliant (Pb-free lead plating)
Halogen-Free β€” Yes, per IEC 61249-2-21
Avalanche Rated β€” Yes (100% avalanche tested)

Datasheets & Resources

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