BSZ0901NSIATMA1 vs BSC014NE2LSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0901NSIATMA1 by Infineon and BSC014NE2LSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSC014NE2LSIATMA1
BSC014NE2LSIATMA1 - 25V OptiMOS N-Ch MOSFET 100A | Infineon
BSC014NE2LSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0901NSIATMA1 | BSC014NE2LSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.34 | $0.48 |
| Manufacturer | Infineon Technologies | β |
| Part Number | BSZ0901NSIATMA1 | β |
| Series | OptiMOS 25V | β |
| Technology | OptiMOS trench N-channel MOSFET | N-Channel MOSFET (OptiMOS 25V) |
| FET Type | N-Channel | β |
| Drain-Source Voltage (VDS) | 30 V | 25 V |
| Continuous Drain Current (ID) at Ta=25C | 25 A | β |
| Continuous Drain Current (ID) at Tc=25C | 40 A | β |
| Power Dissipation (PD) at Ta=25C | 2.1 W | β |
| Power Dissipation (PD) at Tc=25C | 69 W | β |
| Package | PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) | PG-TDSON-8-7 (SuperSO8) |
| Mounting Type | Surface Mount | Surface Mount |
| Pin Count | 8 | β |
| Gate Threshold Voltage (VGS(th)) | [DATA_NEEDED: gate threshold voltage] | β |
| On-Resistance RDS(on) max @ VGS=10V | [DATA_NEEDED: RDS(on) max @ VGS=10V] | β |
| On-Resistance RDS(on) max @ VGS=4.5V | [DATA_NEEDED: RDS(on) max @ VGS=4.5V] | β |
| Total Gate Charge (Qg) | [DATA_NEEDED: total gate charge Qg] | [DATA_NEEDED: Qg typ at VGS=10V] |
| Operating Temperature Range | -55 C to +150 C (typical MOSFET range) | β |
| Packaging | Tape & Reel (ATMA1 suffix = 13-inch reel) | β |
| RoHS Status | Compliant | Compliant |
| Gate-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current (ID, Ta) | β | 33 A |
| Continuous Drain Current (ID, Tc) | β | [DATA_NEEDED: Tc condition rating] |
| Pulsed Drain Current (IDM, Tc) | β | 100 A |
| On-State Resistance RDS(on) | β | 1.4 mOhm (typ) at VGS = 10 V |
| Power Dissipation (Ta) | β | 2.5 W |
| Power Dissipation (Tc) | β | 74 W |
| Operating Junction Temperature | β | -55 Β°C to +150 Β°C |
| MSL Level | β | 1 (per JEDEC J-STD-020) |
| Lead-Free | β | Yes |