BSZ0901NSIATMA1 vs BSC014NE2LSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0901NSIATMA1 dari Infineon dan BSC014NE2LSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0901NSIATMA1 BSC014NE2LSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Part Number BSZ0901NSIATMA1 —
Series OptiMOS 25V —
Technology OptiMOS trench N-channel MOSFET N-Channel MOSFET (OptiMOS 25V)
FET Type N-Channel —
Drain-Source Voltage (VDS) 30 V 25 V
Continuous Drain Current (ID) at Ta=25C 25 A —
Continuous Drain Current (ID) at Tc=25C 40 A —
Power Dissipation (PD) at Ta=25C 2.1 W —
Power Dissipation (PD) at Tc=25C 69 W —
Paket PG-TSDSON-8-FL (TSDSON EP, 3.3 mm x 3.3 mm) PG-TDSON-8-7 (SuperSO8)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Gate Threshold Voltage (VGS(th)) [DATA_NEEDED: gate threshold voltage] —
On-Resistance RDS(on) max @ VGS=10V [DATA_NEEDED: RDS(on) max @ VGS=10V] —
On-Resistance RDS(on) max @ VGS=4.5V [DATA_NEEDED: RDS(on) max @ VGS=4.5V] —
Total Gate Charge (Qg) [DATA_NEEDED: total gate charge Qg] [DATA_NEEDED: Qg typ at VGS=10V]
Rentang Suhu Kerja -55 C to +150 C (typical MOSFET range) —
Packaging Tape & Reel (ATMA1 suffix = 13-inch reel) —
Status RoHS Compliant Compliant
Gate-Source Voltage (VGS) — ±20 V
Continuous Drain Current (ID, Ta) — 33 A
Continuous Drain Current (ID, Tc) — [DATA_NEEDED: Tc condition rating]
Pulsed Drain Current (IDM, Tc) — 100 A
On-State Resistance RDS(on) — 1.4 mOhm (typ) at VGS = 10 V
Power Dissipation (Ta) — 2.5 W
Power Dissipation (Tc) — 74 W
Suhu Hubung Kerja — -55 °C to +150 °C
Level MSL — 1 (per JEDEC J-STD-020)
Lead-Free — Yes

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