BSZ0994NSATMA1 vs BSC050N04LSGATMA1 Comparison
Detailed side-by-side comparison of BSZ0994NSATMA1 by Infineon and BSC050N04LSGATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0994NSATMA1
BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon
BSZ0994NSATMA1 β ActiveInfineon
BSC050N04LSGATMA1
BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon
BSC050N04LSGATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0994NSATMA1 | BSC050N04LSGATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.31 | $0.41 |
| Manufacturer | Infineon Technologies | β |
| Series | OptiMOS 5 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Ta) | 13 A | β |
| Power Dissipation (PD, Ta) | 2.1 W | β |
| Technology | Trench (OptiMOS 5) | OptiMOS 3 (trench MOSFET) |
| Package | PG-TSDSON-8-25 (5x6 mm) | PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Operating Temperature Range | -55C to +150C (junction) | -55C to +150C |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typ] | β |
| On-Resistance (RDS(on), typ @10V) | [DATA_NEEDED: RDS(on) typ @VGS=10V] | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | 1 |
| Packaging | Tape & Reel | β |
| FET Type | β | N-Channel |
| Drain-to-Source Voltage (VDS) | β | 40 V |
| Gate-to-Source Voltage (VGS) | β | Β±20 V |
| Continuous Drain Current at 25C (ID, Ta) | β | 18 A |
| Continuous Drain Current at 25C (ID, Tc) | β | 85 A |
| Pulsed Drain Current (IDM) | β | [DATA_NEEDED: pulsed drain current IDM] |
| Power Dissipation at Ta (PD) | β | 2.5 W |
| Power Dissipation at Tc (PD) | β | 57 W |
| On-State Resistance (RDS(on)) | β | [DATA_NEEDED: RDS(on) max at VGS=10V] |
| On-State Resistance (RDS(on)) at VGS=4.5V | β | [DATA_NEEDED: RDS(on) at VGS=4.5V] |
| Gate Threshold Voltage (VGS(th)) | β | [DATA_NEEDED: VGS(th) typ/min/max] |
| Avalanche Energy Rated | β | Yes (single-pulse avalanche) |