BSZ0994NSATMA1 vs BSC050N04LSGATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0994NSATMA1 dari Infineon dan BSC050N04LSGATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Infineon
BSC050N04LSGATMA1 BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 - 40V 85A N-Ch OptiMOS 3 | Infineon

BSC050N04LSGATMA1 ✓ Aktif

Perbandingan Spesifikasi

Parameter Umum BSZ0994NSATMA1 BSC050N04LSGATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies —
Series OptiMOS 5 30V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID, Ta) 13 A —
Power Dissipation (PD, Ta) 2.1 W —
Technology Trench (OptiMOS 5) OptiMOS 3 (trench MOSFET)
Paket PG-TSDSON-8-25 (5x6 mm) PG-TDSON-8-5 (TDSON-8 EP, 5x6 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +150C (junction) -55C to +150C
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
On-Resistance (RDS(on), typ @10V) [DATA_NEEDED: RDS(on) typ @VGS=10V] —
Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) 1
Packaging Tape & Reel —
FET Type — N-Channel
Drain-to-Source Voltage (VDS) — 40 V
Gate-to-Source Voltage (VGS) — ±20 V
Continuous Drain Current at 25C (ID, Ta) — 18 A
Continuous Drain Current at 25C (ID, Tc) — 85 A
Pulsed Drain Current (IDM) — [DATA_NEEDED: pulsed drain current IDM]
Power Dissipation at Ta (PD) — 2.5 W
Power Dissipation at Tc (PD) — 57 W
On-State Resistance (RDS(on)) — [DATA_NEEDED: RDS(on) max at VGS=10V]
On-State Resistance (RDS(on)) at VGS=4.5V — [DATA_NEEDED: RDS(on) at VGS=4.5V]
Gate Threshold Voltage (VGS(th)) — [DATA_NEEDED: VGS(th) typ/min/max]
Avalanche Energy Rated — Yes (single-pulse avalanche)

Spek dan Sumber

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