BSZ0994NSATMA1 vs BSZ0501NSIATMA1 Comparison
Detailed side-by-side comparison of BSZ0994NSATMA1 by Infineon and BSZ0501NSIATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Infineon
BSZ0994NSATMA1
BSZ0994NSATMA1 - 30V 13A N-Channel OptiMOS 5 MOSFET | Infineon
BSZ0994NSATMA1 β ActiveInfineon
BSZ0501NSIATMA1
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 β ActiveSpecification Comparison
| Parameter | BSZ0994NSATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | MOSFETs | MOSFETs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $0.31 | $0.29 |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | β |
| Transistor Type | N-Channel MOSFET | β |
| Drain-Source Voltage (VDS) | 30 V | β |
| Continuous Drain Current (ID, Ta) | 13 A | β |
| Power Dissipation (PD, Ta) | 2.1 W | β |
| Technology | Trench (OptiMOS 5) | β |
| Package | PG-TSDSON-8-25 (5x6 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Number of Pins | 8 | β |
| Operating Temperature Range | -55C to +150C (junction) | [DATA_NEEDED: Tj max] |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typ] | β |
| On-Resistance (RDS(on), typ @10V) | [DATA_NEEDED: RDS(on) typ @VGS=10V] | β |
| Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge Qg] | β |
| RoHS Status | Compliant | Compliant |
| MSL Level | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel | β |
| Part Number | β | BSZ0501NSIATMA1 |
| Product Family | β | OptiMOS 5 (25V/30V) |
| FET Type | β | N-Channel |
| Drain-Source Voltage (Vds) | β | 30 V |
| Continuous Drain Current (Id) at TA=25C | β | 25 A |
| Continuous Drain Current (Id) at TC=25C | β | 40 A |
| Power Dissipation (Pd) at TA=25C | β | 2.1 W |
| Power Dissipation (Pd) at TC=25C | β | 50 W |
| Operating Mode | β | Enhancement Mode |
| Configuration | β | Single with built-in diode |
| Number of Terminals | β | 8 |
| JESD-609 Code | β | e3 (matte tin) |
| Rds(on) at Vgs=10V (typ) | β | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | β | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | β | [DATA_NEEDED: Qg] |