BSZ0994NSATMA1 vs BSZ0501NSIATMA1 Perbandingan

Perbandingan bersamaan detil BSZ0994NSATMA1 dari Infineon dan BSZ0501NSIATMA1 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum BSZ0994NSATMA1 BSZ0501NSIATMA1
Merek Infineon Infineon
Kategori MOSFETs MOSFETs
Status Lingkungan Hidup Aktif Aktif
Manufacturer Infineon Technologies Infineon Technologies
Series OptiMOS 5 30V —
Tipe Transistor N-Channel MOSFET —
Drain-Source Voltage (VDS) 30 V —
Continuous Drain Current (ID, Ta) 13 A —
Power Dissipation (PD, Ta) 2.1 W —
Technology Trench (OptiMOS 5) —
Paket PG-TSDSON-8-25 (5x6 mm) PG-TSDSON-8-FL (3.3 x 3.3 mm)
Tipe Mounting Surface Mount Surface Mount
Jumlah Pin 8 —
Rentang Suhu Kerja -55C to +150C (junction) [DATA_NEEDED: Tj max]
Gate Threshold Voltage (VGS(th), typ) [DATA_NEEDED: VGS(th) typ] —
On-Resistance (RDS(on), typ @10V) [DATA_NEEDED: RDS(on) typ @VGS=10V] —
Gate Charge (Qg, typ) [DATA_NEEDED: total gate charge Qg] —
Status RoHS Compliant Compliant
Level MSL 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL rating]
Packaging Tape & Reel —
Part Number — BSZ0501NSIATMA1
Product Family — OptiMOS 5 (25V/30V)
FET Type — N-Channel
Drain-Source Voltage (Vds) — 30 V
Continuous Drain Current (Id) at TA=25C — 25 A
Continuous Drain Current (Id) at TC=25C — 40 A
Power Dissipation (Pd) at TA=25C — 2.1 W
Power Dissipation (Pd) at TC=25C — 50 W
Operating Mode — Enhancement Mode
Configuration — Single with built-in diode
Number of Terminals — 8
JESD-609 Code — e3 (matte tin)
Rds(on) at Vgs=10V (typ) — [DATA_NEEDED: Rds(on) value]
Gate Threshold Voltage (Vgs(th)) — [DATA_NEEDED: Vgs(th)]
Total Gate Charge (Qg) — [DATA_NEEDED: Qg]

Spek dan Sumber

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