BSZ0994NSATMA1 vs BSZ0501NSIATMA1 Ikinahambing
Detalyadong pagkakahiwalay na pagkakahambing ng BSZ0994NSATMA1 sa pamamagitan ng Infineon at BSZ0501NSIATMA1 sa pamamagitan ng Infineon. Ikinahambing ang mga pangunahing paglalarawan, mga tama ng elektriko, paakay, kalagayan ng buhay, presyo, at pagkakaroon upang makita ang pinakamahusay na komponente para sa iyong mga kinakailangang pang disenyo.
Infineon
BSZ0501NSIATMA1 - 30V 40A OptiMOS 5 N-Channel MOSFET | Infineon
BSZ0501NSIATMA1 ✓ NakahandaPagsanggunian na paghahambing
| Parametro | BSZ0994NSATMA1 | BSZ0501NSIATMA1 |
|---|---|---|
| Brand | Infineon | Infineon |
| Kategorya | MOSFETs | MOSFETs |
| Katayuan ng Lifecycle | Aktibo | Aktibo |
| Manufacturer | Infineon Technologies | Infineon Technologies |
| Series | OptiMOS 5 30V | — |
| Uri ng Transistor | N-Channel MOSFET | — |
| Drain-Source Voltage (VDS) | 30 V | — |
| Continuous Drain Current (ID, Ta) | 13 A | — |
| Power Dissipation (PD, Ta) | 2.1 W | — |
| Technology | Trench (OptiMOS 5) | — |
| Packhaging | PG-TSDSON-8-25 (5x6 mm) | PG-TSDSON-8-FL (3.3 x 3.3 mm) |
| Uri ng Pagpapasok | Surface Mount | Surface Mount |
| Bilang ng Pins | 8 | — |
| Hanay ng Temperature na Operasyon | -55C to +150C (junction) | [DATA_NEEDED: Tj max] |
| Gate Threshold Voltage (VGS(th), typ) | [DATA_NEEDED: VGS(th) typ] | — |
| On-Resistance (RDS(on), typ @10V) | [DATA_NEEDED: RDS(on) typ @VGS=10V] | — |
| Gate Charge (Qg, typ) | [DATA_NEEDED: total gate charge Qg] | — |
| Tindminan RoHS | Compliant | Compliant |
| Level ng MSL | 1 (per JEDEC J-STD-020) | [DATA_NEEDED: MSL rating] |
| Packaging | Tape & Reel | — |
| Part Number | — | BSZ0501NSIATMA1 |
| Product Family | — | OptiMOS 5 (25V/30V) |
| FET Type | — | N-Channel |
| Drain-Source Voltage (Vds) | — | 30 V |
| Continuous Drain Current (Id) at TA=25C | — | 25 A |
| Continuous Drain Current (Id) at TC=25C | — | 40 A |
| Power Dissipation (Pd) at TA=25C | — | 2.1 W |
| Power Dissipation (Pd) at TC=25C | — | 50 W |
| Operating Mode | — | Enhancement Mode |
| Configuration | — | Single with built-in diode |
| Number of Terminals | — | 8 |
| JESD-609 Code | — | e3 (matte tin) |
| Rds(on) at Vgs=10V (typ) | — | [DATA_NEEDED: Rds(on) value] |
| Gate Threshold Voltage (Vgs(th)) | — | [DATA_NEEDED: Vgs(th)] |
| Total Gate Charge (Qg) | — | [DATA_NEEDED: Qg] |