BSZ130N03LSGATMA1 vs BSZ110N08NS5ATMA1 Comparison

Detailed side-by-side comparison of BSZ130N03LSGATMA1 by Infineon and BSZ110N08NS5ATMA1 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Infineon
BSZ110N08NS5ATMA1

BSZ110N08NS5ATMA1 - 80V 40A OptiMOS 5 N-MOSFET | Infineon

BSZ110N08NS5ATMA1 βœ“ Active

Specification Comparison

Parameter BSZ130N03LSGATMA1 BSZ110N08NS5ATMA1
Brand Infineon Infineon
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.41 $0.44
Manufacturer Infineon Technologies Infineon Technologies
Part Family OptiMOS 25V / 30V OptiMOS 5
Polarity / Channel Type N-Channel Enhancement Mode β€”
Drain-Source Voltage (Vds) 30 V β€”
Continuous Drain Current (Ta=25 C) 10 A β€”
Continuous Drain Current (Tc=25 C) 35 A β€”
On-State Resistance Rds(on) max @ Vgs=10V 13 mOhm β€”
Gate Threshold Voltage Vgs(th) typ @ Vds=Vgs, Id=250uA 2.2 V β€”
Power Dissipation (Ta) 2.1 W β€”
Power Dissipation (Tc) 25 W β€”
Package PG-TSDSON-8 (8-PowerTDFN, 5x6 mm) PG-TSDSON-8-FL (PQFN 3.3 x 3.3)
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55 C to +150 C (junction) [DATA_NEEDED: operating temperature range]
MSL Level 1 (per JEDEC J-STD-020) [DATA_NEEDED: MSL level]
RoHS Status Compliant Compliant
Lead-Free Yes β€”
Halogen-Free Yes β€”
Qualification Industrial / Commercial (non-automotive) β€”
Technology β€” OptiMOS 5 N-Channel Power MOSFET
Drain-to-Source Voltage (VDS) β€” 80 V
Continuous Drain Current (ID) at Tc β€” 40 A
On-Resistance RDS(on) max β€” 11 mΞ©
Power Dissipation (PD) at Tc β€” 50 W
Polarity β€” N-Channel
Configuration β€” Single MOSFET
Gate Drive Voltage (VGS) β€” [DATA_NEEDED: VGS rating]

Datasheets & Resources

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