CY14V104LA-BA45XIT vs CY14V104LA Comparison

Detailed side-by-side comparison of CY14V104LA-BA45XIT by Infineon and CY14V104LA by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter CY14V104LA-BA45XIT CY14V104LA
Brand Infineon Infineon
Category EEPROM Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $4.60 $10.85
Memory Type nvSRAM (Non-Volatile SRAM) Non-Volatile SRAM (nvSRAM)
Memory Size 4 Mbit —
Organization 512K x 8 —
Interface Parallel Parallel (asynchronous SRAM-compatible)
Access Time 45 ns 25 ns (BA25) or 45 ns (BA45)
Supply Voltage Range 3 V (min VCC 2.7 V typical class, max 3.6 V) —
Max Operating Voltage 3.6 V —
Mounting Type Surface Mount Surface Mount
Package 48-FBGA (6 x 10 mm, 1.20 mm height) 48-FBGA (6 x 10 x 1.20 mm)
Operating Temperature -40C to +85C -40 C to +85 C (industrial)
Read/Write Endurance Unlimited (SRAM mode) Unlimited (SRAM side)
Automotive Qualified No (industrial grade) —
Memory Category NVRAM, NVSRAM, SRAM Chip —
Density 4096 kbits 4 Mbit (512 K x 8 / 256 K x 16)
Number of Words 128 k —
Bits per Word 8 bits —
RoHS Status RoHS Compliant Compliant
Packaging Tape & Reel (T/R) —
Operating Voltage — 3.3 V (3.0 V min, 3.6 V max)
Bus Width — x8 / x16 selectable (BYTE pin)
STORE Time (typical) — [DATA_NEEDED: STORE time in ms]
RECALL Time (typical) — [DATA_NEEDED: RECALL time in ms]
Active Supply Current (Icc) — [DATA_NEEDED: Icc active mA]
Standby Current (Isb) — [DATA_NEEDED: Isb uA]
Hardware STORE Pin — HSB (active low)
Auto STORE on VCC Drop — Yes (integrated VCc monitor)
Data Retention — [DATA_NEEDED: retention years]

Datasheets & Resources

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