CY14V104LA-BA45XIT vs CY14V104LA 对比
详细并排对比 CY14V104LA-BA45XIT 出自 Infineon 和 CY14V104LA 出自 Infineon。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | CY14V104LA-BA45XIT | CY14V104LA |
|---|---|---|
| 品牌 | Infineon | Infineon |
| 分类 | EEPROM | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $4.60 | $10.85 |
| 存储器类型 | nvSRAM (Non-Volatile SRAM) | Non-Volatile SRAM (nvSRAM) |
| 存储容量 | 4 Mbit | — |
| 存储组织 | 512K x 8 | — |
| 接口 | Parallel | Parallel (asynchronous SRAM-compatible) |
| Access Time | 45 ns | 25 ns (BA25) or 45 ns (BA45) |
| Supply Voltage Range | 3 V (min VCC 2.7 V typical class, max 3.6 V) | — |
| Max Operating Voltage | 3.6 V | — |
| 安装类型 | Surface Mount | Surface Mount |
| 封装 | 48-FBGA (6 x 10 mm, 1.20 mm height) | 48-FBGA (6 x 10 x 1.20 mm) |
| 工作温度 | -40C to +85C | -40 C to +85 C (industrial) |
| Read/Write Endurance | Unlimited (SRAM mode) | Unlimited (SRAM side) |
| Automotive Qualified | No (industrial grade) | — |
| Memory Category | NVRAM, NVSRAM, SRAM Chip | — |
| Density | 4096 kbits | 4 Mbit (512 K x 8 / 256 K x 16) |
| Number of Words | 128 k | — |
| Bits per Word | 8 bits | — |
| RoHS 状态 | RoHS Compliant | Compliant |
| Packaging | Tape & Reel (T/R) | — |
| Operating Voltage | — | 3.3 V (3.0 V min, 3.6 V max) |
| Bus Width | — | x8 / x16 selectable (BYTE pin) |
| STORE Time (typical) | — | [DATA_NEEDED: STORE time in ms] |
| RECALL Time (typical) | — | [DATA_NEEDED: RECALL time in ms] |
| Active Supply Current (Icc) | — | [DATA_NEEDED: Icc active mA] |
| Standby Current (Isb) | — | [DATA_NEEDED: Isb uA] |
| Hardware STORE Pin | — | HSB (active low) |
| Auto STORE on VCC Drop | — | Yes (integrated VCc monitor) |
| Data Retention | — | [DATA_NEEDED: retention years] |