FDMC89521L vs DMN3190LDW-7 Comparison

Detailed side-by-side comparison of FDMC89521L by onsemi and DMN3190LDW-7 by Diodes Incorporated. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Diodes Incorporated
DMN3190LDW-7 DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363

DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363

DMN3190LDW-7 ✓ Active

Specification Comparison

Parameter FDMC89521L DMN3190LDW-7
Brand onsemi Diodes Incorporated
Category MOSFETs MOSFETs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $0.52 $0.10
Manufacturer onsemi (Fairchild Semiconductor) —
FET Type 2 × N-Channel (Dual) Dual N-Channel Enhancement Mode
Drain-Source Voltage (Vdss) 60 V —
Continuous Drain Current (Id) @ TA=25C 8.2 A —
Continuous Drain Current (Id) @ TC=25C [DATA_NEEDED: TC-rated Id] —
On-Resistance Rds(on) @ Vgs=10V 17 mΩ —
Gate-Source Voltage (Vgs) ±20 V —
Power Dissipation (TA=25C) 1.9 W —
Power Dissipation (TC=25C) 16 W —
Technology POWERTRENCH shielded-gate trench MOSFET Silicon N-Channel MOSFET
Package 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) SOT-363 (SC-70-6) 6-pin
Mounting Type Surface Mount Surface Mount
Operating Temperature Range -55C to +150C (Tj) —
MSL Level 1 (per onsemi product page) 1 (unlimited)
RoHS Status Compliant Compliant
Body Diode Integrated N-channel body diode —
Configuration Dual independent drain-source pairs Dual, independent drains
Drain-Source Voltage (VDS) — 30 V
Gate-Source Voltage (VGS) — 20 V
Continuous Drain Current (ID) — 1 A
Power Dissipation (PD) — 320 mW
Operating Temperature — -55C to +150C
Channel Mode — Enhancement
Lead-Free — Yes
Factory Pack Quantity — 3000

Datasheets & Resources

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