FDMC89521L vs DMN3190LDW-7 比較
詳細な並列比較: FDMC89521L メーカー: onsemi および DMN3190LDW-7 メーカー: Diodes Incorporated。主要仕様、電気的特性、パッケージ、ライフサイクルステータス、価格、在庫状況を比較して、設計要件に最適な部品を判断してください。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 生産中仕様比較
| パラメータ | FDMC89521L | DMN3190LDW-7 |
|---|---|---|
| ブランド | onsemi | Diodes Incorporated |
| カテゴリ | MOSFETs | MOSFETs |
| ライフサイクル状態 | 有効 | 有効 |
| 在庫状況 | In Stock | In Stock |
| 単価（USD） | $0.52 | $0.10 |
| Manufacturer | onsemi (Fairchild Semiconductor) | — |
| FET Type | 2 × N-Channel (Dual) | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ TA=25C | 8.2 A | — |
| Continuous Drain Current (Id) @ TC=25C | [DATA_NEEDED: TC-rated Id] | — |
| On-Resistance Rds(on) @ Vgs=10V | 17 mΩ | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Power Dissipation (TA=25C) | 1.9 W | — |
| Power Dissipation (TC=25C) | 16 W | — |
| Technology | POWERTRENCH shielded-gate trench MOSFET | Silicon N-Channel MOSFET |
| パッケージ | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) | SOT-363 (SC-70-6) 6-pin |
| 実装タイプ | Surface Mount | Surface Mount |
| 動作温度範囲 | -55C to +150C (Tj) | — |
| MSLレベル | 1 (per onsemi product page) | 1 (unlimited) |
| RoHS ステータス | Compliant | Compliant |
| Body Diode | Integrated N-channel body diode | — |
| Configuration | Dual independent drain-source pairs | Dual, independent drains |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| 動作温度 | — | -55C to +150C |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |