FDMC89521L vs DMN3190LDW-7 Vergleich
Detaillierter Direktvergleich von FDMC89521L von onsemi und DMN3190LDW-7 von Diodes Incorporated. Vergleichen Sie die wichtigsten Spezifikationen, elektrischen Parameter, Gehäuse, Lebenszyklusstatus, Preise und Verfügbarkeit, um das beste Bauteil für Ihre Designanforderungen zu ermitteln.
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ AktivSpezifikationsvergleich
| Parameter | FDMC89521L | DMN3190LDW-7 |
|---|---|---|
| Marke | onsemi | Diodes Incorporated |
| Kategorie | MOSFETs | MOSFETs |
| Lebenszyklusstatus | Aktiv | Aktiv |
| Lagerstatus | In Stock | In Stock |
| Stückpreis (USD) | $0,52 | $0,10 |
| Manufacturer | onsemi (Fairchild Semiconductor) | — |
| FET Type | 2 × N-Channel (Dual) | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ TA=25C | 8.2 A | — |
| Continuous Drain Current (Id) @ TC=25C | [DATA_NEEDED: TC-rated Id] | — |
| On-Resistance Rds(on) @ Vgs=10V | 17 mΩ | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Power Dissipation (TA=25C) | 1.9 W | — |
| Power Dissipation (TC=25C) | 16 W | — |
| Technology | POWERTRENCH shielded-gate trench MOSFET | Silicon N-Channel MOSFET |
| Gehäuse | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) | SOT-363 (SC-70-6) 6-pin |
| Montageart | Surface Mount | Surface Mount |
| Betriebstemperaturbereich | -55C to +150C (Tj) | — |
| MSL-Level | 1 (per onsemi product page) | 1 (unlimited) |
| RoHS-Status | Compliant | Compliant |
| Body Diode | Integrated N-channel body diode | — |
| Configuration | Dual independent drain-source pairs | Dual, independent drains |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| Betriebstemperatur | — | -55C to +150C |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |