FDMC89521L vs DMN3190LDW-7 对比
详细并排对比 FDMC89521L 出自 onsemi 和 DMN3190LDW-7 出自 Diodes Incorporated。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
Diodes Incorporated
DMN3190LDW-7 - 30V Dual N-Channel MOSFET Array | Diodes Inc | SOT-363
DMN3190LDW-7 ✓ 量产中规格对比
| 参数 | FDMC89521L | DMN3190LDW-7 |
|---|---|---|
| 品牌 | onsemi | Diodes Incorporated |
| 分类 | MOSFETs | MOSFETs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $0.52 | $0.10 |
| Manufacturer | onsemi (Fairchild Semiconductor) | — |
| FET Type | 2 × N-Channel (Dual) | Dual N-Channel Enhancement Mode |
| Drain-Source Voltage (Vdss) | 60 V | — |
| Continuous Drain Current (Id) @ TA=25C | 8.2 A | — |
| Continuous Drain Current (Id) @ TC=25C | [DATA_NEEDED: TC-rated Id] | — |
| On-Resistance Rds(on) @ Vgs=10V | 17 mΩ | — |
| Gate-Source Voltage (Vgs) | ±20 V | — |
| Power Dissipation (TA=25C) | 1.9 W | — |
| Power Dissipation (TC=25C) | 16 W | — |
| Technology | POWERTRENCH shielded-gate trench MOSFET | Silicon N-Channel MOSFET |
| 封装 | 8-Power33 (MLP-8 / Power 33, 3 mm × 3 mm) | SOT-363 (SC-70-6) 6-pin |
| 安装类型 | Surface Mount | Surface Mount |
| 工作温度范围 | -55C to +150C (Tj) | — |
| MSL 等级 | 1 (per onsemi product page) | 1 (unlimited) |
| RoHS 状态 | Compliant | Compliant |
| Body Diode | Integrated N-channel body diode | — |
| Configuration | Dual independent drain-source pairs | Dual, independent drains |
| Drain-Source Voltage (VDS) | — | 30 V |
| Gate-Source Voltage (VGS) | — | 20 V |
| Continuous Drain Current (ID) | — | 1 A |
| Power Dissipation (PD) | — | 320 mW |
| 工作温度 | — | -55C to +150C |
| Channel Mode | — | Enhancement |
| Lead-Free | — | Yes |
| Factory Pack Quantity | — | 3000 |