FF2000R17T2P8 vs FF1400R17T2P8 Comparison
Detailed side-by-side comparison of FF2000R17T2P8 by Infineon and FF1400R17T2P8 by Infineon. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | FF2000R17T2P8 | FF1400R17T2P8 |
|---|---|---|
| Brand | Infineon | Infineon |
| Category | IGBTs | IGBTs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $1,960.00 | $680.00 |
| Topology | Half-Bridge (2-in-1) | — |
| Package Platform | XHP 2 (XHPTM2) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal DC Collector Current | 2000 A | — |
| IGBT Technology | TRENCHSTOP IGBT8 trench field-stop | — |
| Diode Technology | Emitter controlled 8 (EC8) soft recovery | — |
| Integrated Temperature Sensor | NTC | NTC thermistor |
| Mounting Type | Chassis Mount Module | Chassis Mount |
| Applications Grade | Industrial / traction / wind | — |
| Short-Circuit Capability | Short-circuit rated per datasheet | — |
| Collector-Emitter Saturation Voltage (Vce(sat)) | [DATA_NEEDED: VCE(sat) typical] | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: maximum VGES] | — |
| Thermal Resistance Junction to Case (RthJC) | [DATA_NEEDED: RthJC per IGBT] | — |
| Operating Junction Temperature | [DATA_NEEDED: Tj range] | — |
| Power Dissipation | [DATA_NEEDED: maximum Ptot] | — |
| RoHS Status | unknown | [DATA_NEEDED: RoHS status] |
| Technology | — | TRENCHSTOP IGBT8, EC8 diode |
| Configuration | — | Half-bridge (Chopper 2) |
| Package | — | XHP 2 (AG-XHP2K17) |
| Nominal Collector Current (IC nom) | — | 1400 A |
| Repetitive Peak Collector Current (ICRM) | — | 2800 A |
| Maximum Junction Temperature | — | 175 C |
| Freewheeling Diode | — | EC8 emitter controlled, soft fast recovery |
| Qualification | — | Industrial, per relevant tests of IEC 60747, 60749, 60068 |
| DC-Link Voltage Class | — | Approx. 1000 V to 1100 V typical |
| Module Stray Inductance | — | [DATA_NEEDED: internal stray inductance] |
| Thermal Resistance Junction to Case (RthJC IGBT) | — | [DATA_NEEDED: RthJC per IGBT] |
| Gate-Emitter Threshold Voltage | — | [DATA_NEEDED: VGE(th)] |
| Power Dissipation (Ptot) | — | [DATA_NEEDED: total power dissipation] |