FF2000R17T2P8 vs FF1400R17T2P8 比較

詳細並排比較 FF2000R17T2P8 由 Infineon 與 FF1400R17T2P8 由 Infineon. 比較關鍵規格、電氣參數、封裝、生命週期狀態、價格與供貨情況,以找出最符合您設計需求的元件。

Infineon
FF1400R17T2P8 FF1400R17T2P8 - 1700V 1400A XHP2 IGBT Module | Infineon

FF1400R17T2P8 - 1700V 1400A XHP2 IGBT Module | Infineon

FF1400R17T2P8 ✓ 啟用中

規格比較

參數 FF2000R17T2P8 FF1400R17T2P8
品牌 Infineon Infineon
類別 IGBTs IGBTs
生命週期狀態 啟用中 啟用中
拓撲 Half-Bridge (2-in-1) —
Package Platform XHP 2 (XHPTM2) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal DC Collector Current 2000 A —
IGBT Technology TRENCHSTOP IGBT8 trench field-stop —
Diode Technology Emitter controlled 8 (EC8) soft recovery —
Integrated Temperature Sensor NTC NTC thermistor
安裝類型 Chassis Mount Module Chassis Mount
Applications Grade Industrial / traction / wind —
Short-Circuit Capability Short-circuit rated per datasheet —
集極-射極飽和電壓 (Vce(sat)) [DATA_NEEDED: VCE(sat) typical] —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: maximum VGES] —
Thermal Resistance Junction to Case (RthJC) [DATA_NEEDED: RthJC per IGBT] —
工作接面溫度 [DATA_NEEDED: Tj range] —
Power Dissipation [DATA_NEEDED: maximum Ptot] —
RoHS 狀態 unknown [DATA_NEEDED: RoHS status]
Technology — TRENCHSTOP IGBT8, EC8 diode
Configuration — Half-bridge (Chopper 2)
封裝 — XHP 2 (AG-XHP2K17)
Nominal Collector Current (IC nom) — 1400 A
Repetitive Peak Collector Current (ICRM) — 2800 A
Maximum Junction Temperature — 175 C
Freewheeling Diode — EC8 emitter controlled, soft fast recovery
Qualification — Industrial, per relevant tests of IEC 60747, 60749, 60068
DC-Link Voltage Class — Approx. 1000 V to 1100 V typical
Module Stray Inductance — [DATA_NEEDED: internal stray inductance]
Thermal Resistance Junction to Case (RthJC IGBT) — [DATA_NEEDED: RthJC per IGBT]
Gate-Emitter Threshold Voltage — [DATA_NEEDED: VGE(th)]
功率耗散 (Ptot) — [DATA_NEEDED: total power dissipation]

資料表與資源

瀏覽所有產品 建立 BOM 索取報價