FF2000R17T2P8 vs FF1400R17T2P8 مقارنة
مقارنة تفصيلية جنبًا إلى جنب لـ FF2000R17T2P8 بواسطة Infineon و FF1400R17T2P8 بواسطة Infineon. قارن المواصفات الرئيسية والمعلمات الكهربائية والتغليف وحالة دورة الحياة والأسعار والتوافر لتحديد أفضل مكوّن لمتطلبات تصميمك.
مقارنة المواصفات
| المعامل | FF2000R17T2P8 | FF1400R17T2P8 |
|---|---|---|
| العلامة التجارية | Infineon | Infineon |
| الفئة | IGBTs | IGBTs |
| حالة دورة الحياة | نشط | نشط |
| البنية الطوبولوجية | Half-Bridge (2-in-1) | — |
| Package Platform | XHP 2 (XHPTM2) | — |
| Collector-Emitter Voltage (VCES) | 1700 V | 1700 V |
| Nominal DC Collector Current | 2000 A | — |
| IGBT Technology | TRENCHSTOP IGBT8 trench field-stop | — |
| Diode Technology | Emitter controlled 8 (EC8) soft recovery | — |
| Integrated Temperature Sensor | NTC | NTC thermistor |
| نوع التركيب | Chassis Mount Module | Chassis Mount |
| Applications Grade | Industrial / traction / wind | — |
| Short-Circuit Capability | Short-circuit rated per datasheet | — |
| جهد التشبع للمجمّع-الباعث (Vce(sat)) | [DATA_NEEDED: VCE(sat) typical] | — |
| Gate-Emitter Voltage (VGES) | [DATA_NEEDED: maximum VGES] | — |
| Thermal Resistance Junction to Case (RthJC) | [DATA_NEEDED: RthJC per IGBT] | — |
| درجة حرارة الوصلة التشغيلية | [DATA_NEEDED: Tj range] | — |
| Power Dissipation | [DATA_NEEDED: maximum Ptot] | — |
| حالة RoHS | unknown | [DATA_NEEDED: RoHS status] |
| Technology | — | TRENCHSTOP IGBT8, EC8 diode |
| Configuration | — | Half-bridge (Chopper 2) |
| العلبة | — | XHP 2 (AG-XHP2K17) |
| Nominal Collector Current (IC nom) | — | 1400 A |
| Repetitive Peak Collector Current (ICRM) | — | 2800 A |
| Maximum Junction Temperature | — | 175 C |
| Freewheeling Diode | — | EC8 emitter controlled, soft fast recovery |
| Qualification | — | Industrial, per relevant tests of IEC 60747, 60749, 60068 |
| DC-Link Voltage Class | — | Approx. 1000 V to 1100 V typical |
| Module Stray Inductance | — | [DATA_NEEDED: internal stray inductance] |
| Thermal Resistance Junction to Case (RthJC IGBT) | — | [DATA_NEEDED: RthJC per IGBT] |
| Gate-Emitter Threshold Voltage | — | [DATA_NEEDED: VGE(th)] |
| تبديد القدرة (Ptot) | — | [DATA_NEEDED: total power dissipation] |