FF2000R17T2P8 vs FF1400R17T2P8 비교

다음의 상세 나란히 비교: FF2000R17T2P8 제조: Infineon 및 FF1400R17T2P8 제조: Infineon. 주요 사양, 전기적 파라미터, 패키징, 수명 주기 상태, 가격 및 재고를 비교하여 설계 요구 사항에 가장 적합한 부품을 결정하십시오.

사양 비교

파라미터 FF2000R17T2P8 FF1400R17T2P8
브랜드 Infineon Infineon
카테고리 IGBTs IGBTs
수명 주기 상태 활성 활성
재고 상태 In Stock In Stock
단가 (USD) $1,960.00 $680.00
토폴로지 Half-Bridge (2-in-1) —
Package Platform XHP 2 (XHPTM2) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal DC Collector Current 2000 A —
IGBT Technology TRENCHSTOP IGBT8 trench field-stop —
Diode Technology Emitter controlled 8 (EC8) soft recovery —
Integrated Temperature Sensor NTC NTC thermistor
실장 유형 Chassis Mount Module Chassis Mount
Applications Grade Industrial / traction / wind —
Short-Circuit Capability Short-circuit rated per datasheet —
컬렉터-이미터 포화 전압 (Vce(sat)) [DATA_NEEDED: VCE(sat) typical] —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: maximum VGES] —
Thermal Resistance Junction to Case (RthJC) [DATA_NEEDED: RthJC per IGBT] —
동작 접합 온도 [DATA_NEEDED: Tj range] —
Power Dissipation [DATA_NEEDED: maximum Ptot] —
RoHS 상태 unknown [DATA_NEEDED: RoHS status]
Technology — TRENCHSTOP IGBT8, EC8 diode
Configuration — Half-bridge (Chopper 2)
패키지 — XHP 2 (AG-XHP2K17)
Nominal Collector Current (IC nom) — 1400 A
Repetitive Peak Collector Current (ICRM) — 2800 A
Maximum Junction Temperature — 175 C
Freewheeling Diode — EC8 emitter controlled, soft fast recovery
Qualification — Industrial, per relevant tests of IEC 60747, 60749, 60068
DC-Link Voltage Class — Approx. 1000 V to 1100 V typical
Module Stray Inductance — [DATA_NEEDED: internal stray inductance]
Thermal Resistance Junction to Case (RthJC IGBT) — [DATA_NEEDED: RthJC per IGBT]
Gate-Emitter Threshold Voltage — [DATA_NEEDED: VGE(th)]
전력 손실 (Ptot) — [DATA_NEEDED: total power dissipation]

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