FF2000R17T2P8 vs FF1400R17T2P8 Perbandingan

Perbandingan bersamaan detil FF2000R17T2P8 dari Infineon dan FF1400R17T2P8 dari Infineon. Bandingkan spesifikasi penting, parameter listrik, pengemasan, status cycle, harga, dan ketersediaan untuk menentukan komponen terbaik untuk kebutuhan desain Anda.

Perbandingan Spesifikasi

Parameter Umum FF2000R17T2P8 FF1400R17T2P8
Merek Infineon Infineon
Kategori IGBTs IGBTs
Status Lingkungan Hidup Aktif Aktif
Topologi Half-Bridge (2-in-1) —
Package Platform XHP 2 (XHPTM2) —
Collector-Emitter Voltage (VCES) 1700 V 1700 V
Nominal DC Collector Current 2000 A —
IGBT Technology TRENCHSTOP IGBT8 trench field-stop —
Diode Technology Emitter controlled 8 (EC8) soft recovery —
Integrated Temperature Sensor NTC NTC thermistor
Tipe Mounting Chassis Mount Module Chassis Mount
Applications Grade Industrial / traction / wind —
Short-Circuit Capability Short-circuit rated per datasheet —
Tegangan Saturasi Pemisah-Penjana (Vce(sat)) [DATA_NEEDED: VCE(sat) typical] —
Gate-Emitter Voltage (VGES) [DATA_NEEDED: maximum VGES] —
Thermal Resistance Junction to Case (RthJC) [DATA_NEEDED: RthJC per IGBT] —
Suhu Hubung Kerja [DATA_NEEDED: Tj range] —
Power Dissipation [DATA_NEEDED: maximum Ptot] —
Status RoHS unknown [DATA_NEEDED: RoHS status]
Technology — TRENCHSTOP IGBT8, EC8 diode
Configuration — Half-bridge (Chopper 2)
Paket — XHP 2 (AG-XHP2K17)
Nominal Collector Current (IC nom) — 1400 A
Repetitive Peak Collector Current (ICRM) — 2800 A
Maximum Junction Temperature — 175 C
Freewheeling Diode — EC8 emitter controlled, soft fast recovery
Qualification — Industrial, per relevant tests of IEC 60747, 60749, 60068
DC-Link Voltage Class — Approx. 1000 V to 1100 V typical
Module Stray Inductance — [DATA_NEEDED: internal stray inductance]
Thermal Resistance Junction to Case (RthJC IGBT) — [DATA_NEEDED: RthJC per IGBT]
Gate-Emitter Threshold Voltage — [DATA_NEEDED: VGE(th)]
Dissipasi Listrik (Ptot) — [DATA_NEEDED: total power dissipation]

Spek dan Sumber

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