H5AN4G8NBJR-PBC vs K4A4G085WD-BCTD Comparison
Detailed side-by-side comparison of H5AN4G8NBJR-PBC by SK hynix and K4A4G085WD-BCTD by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Samsung Electronics
K4A4G085WD-BCTD - 4Gb DDR4 SDRAM 512Mx8 2666Mbps | Samsung
K4A4G085WD-BCTD ✓ ActiveSpecification Comparison
| Parameter | H5AN4G8NBJR-PBC | K4A4G085WD-BCTD |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $2.20 | $2.05 |
| Memory Density | 4 Gbit | — |
| Organization | 512M x 8 | 512M x 8 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Interface Type | Parallel, JEDEC DDR4 | — |
| Supply Voltage VDD | 1.2 V | — |
| Supply Voltage VDDQ | 1.2 V | — |
| Speed Grade | PBC | — |
| Clock Frequency | [DATA_NEEDED: Clock Frequency] | — |
| CAS Latency (CL) | [DATA_NEEDED: CAS Latency] | — |
| Package | 78-ball FBGA | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Normal Operating Case Temperature | 0C to 85C | — |
| Extended Temperature Range | up to 95C case (with increased refresh) | — |
| Lead Free | Yes | — |
| Halogen Free | Yes | — |
| Refresh | 8n prefetch, standard/auto refresh per DDR4 JEDEC | — |
| Die Generation | — | D-die |
| Density | — | 4 Gb |
| Data Rate | — | 2666 Mbps/pin |
| Supply Voltage | — | 1.2 V |
| Operating Temperature | — | 0C to +85C |
| Ball Pitch | — | 0.8 mm |
| Interface | — | DDR4 (JEDEC-compatible) |
| Speed Class | — | DDR4-2666 (PC4-21300) |
| Bank Architecture | — | DDR4 bank-group architecture |
| On-Die Termination (ODT) | — | Yes |
| DLL | — | Yes |
| RoHS Status | — | [DATA_NEEDED: RoHS compliance status] |
| MSL Level | — | [DATA_NEEDED: moisture sensitivity level] |