H5AN4G8NBJR-RDC vs H5AN4G8NBJR-PBC Comparison

Detailed side-by-side comparison of H5AN4G8NBJR-RDC by SK hynix and H5AN4G8NBJR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

Specification Comparison

Parameter H5AN4G8NBJR-RDC H5AN4G8NBJR-PBC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.95 $2.20
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit —
Organization 512M x 8 512M x 8
Interface DDR4 (Double Data Rate IV) —
Package 78-ball FBGA 78-ball FBGA
Mounting Type Surface Mount Surface Mount
Supply Voltage [DATA_NEEDED: VDD supply voltage] —
Data Rate [DATA_NEEDED: speed grade Mbps] —
Bank Architecture 8 banks with 4 bank groups (x8) —
Refresh Auto-refresh and self-refresh 8n prefetch, standard/auto refresh per DDR4 JEDEC
Temperature Grade [DATA_NEEDED: operating temperature range] —
Termination On-Die Termination (ODT) —
RoHS Status Lead-Free & Halogen-Free (RoHS Compliant) —
Process Technology CMOS —
Manufacturer SK hynix —
Family Series H5AN4G4/8/6NBJR —
Memory Density — 4 Gbit
Interface Type — Parallel, JEDEC DDR4
Supply Voltage VDD — 1.2 V
Supply Voltage VDDQ — 1.2 V
Speed Grade — PBC
Clock Frequency — [DATA_NEEDED: Clock Frequency]
CAS Latency (CL) — [DATA_NEEDED: CAS Latency]
Normal Operating Case Temperature — 0C to 85C
Extended Temperature Range — up to 95C case (with increased refresh)
Lead Free — Yes
Halogen Free — Yes

Datasheets & Resources

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