H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-RDC Comparison

Detailed side-by-side comparison of H5AN4G8NBJR-UHCR by SK hynix and H5AN4G8NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ Active

Specification Comparison

Parameter H5AN4G8NBJR-UHCR H5AN4G8NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.18 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
Organization 512M x 8 512M x 8
Speed Grade UH (DDR4-2400 class, PC2400) —
Supply Voltage 1.2 V (VDD) [DATA_NEEDED: VDD supply voltage]
Interface DDR4 SSTL12 DDR4 (Double Data Rate IV)
Internal Prefetch 8n —
Package 78-ball FBGA (11 mm x 7.5 mm) 78-ball FBGA
Mounting Type Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) —
Lead Free Yes —
Halogen Free Yes —
RoHS Status Compliant Lead-Free & Halogen-Free (RoHS Compliant)
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] Auto-refresh and self-refresh
CAS Latency [DATA_NEEDED: CL value for UH grade] —
Data Rate — [DATA_NEEDED: speed grade Mbps]
Bank Architecture — 8 banks with 4 bank groups (x8)
Temperature Grade — [DATA_NEEDED: operating temperature range]
Termination — On-Die Termination (ODT)
Process Technology — CMOS
Manufacturer — SK hynix
Family Series — H5AN4G4/8/6NBJR

Datasheets & Resources

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