H5AN4G8NBJR-UHCR vs H5AN4G8NBJR-RDC 对比

详细并排对比 H5AN4G8NBJR-UHCR 出自 SK hynix 和 H5AN4G8NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况,以确定最适合您设计需求的元器件。

SK hynix
H5AN4G8NBJR-UHCR H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR - 4Gb DDR4 SDRAM 2400 | SK hynix

H5AN4G8NBJR-UHCR ✓ 量产中
SK hynix
H5AN4G8NBJR-RDC H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC - 4Gb DDR4 SDRAM x8 | SK hynix | Main Memory

H5AN4G8NBJR-RDC ✓ 量产中

规格对比

参数 H5AN4G8NBJR-UHCR H5AN4G8NBJR-RDC
品牌 SK hynix SK hynix
分类 Memory ICs Memory ICs
生命周期状态 有效 有效
库存状态 有库存 有库存
单价(USD) $3.18 $2.95
存储器类型 DDR4 SDRAM DDR4 SDRAM
Density 4 Gbit 4 Gbit
存储组织 512M x 8 512M x 8
Speed Grade UH (DDR4-2400 class, PC2400) —
电源电压 1.2 V (VDD) [DATA_NEEDED: VDD supply voltage]
接口 DDR4 SSTL12 DDR4 (Double Data Rate IV)
Internal Prefetch 8n —
封装 78-ball FBGA (11 mm x 7.5 mm) 78-ball FBGA
安装类型 Surface Mount (BGA solder-down) Surface Mount
Operating Case Temperature -40C to +85C (industrial range) —
Extended Temperature Range Up to +95C case temperature (per datasheet conditions) —
Lead Free Yes —
无卤 Yes —
RoHS 状态 Compliant Lead-Free & Halogen-Free (RoHS Compliant)
Packaging Suffix -R = Tape and Reel —
Refresh [DATA_NEEDED: refresh rate 1x/2x specification] Auto-refresh and self-refresh
CAS 延迟 [DATA_NEEDED: CL value for UH grade] —
数据速率 — [DATA_NEEDED: speed grade Mbps]
Bank Architecture — 8 banks with 4 bank groups (x8)
Temperature Grade — [DATA_NEEDED: operating temperature range]
Termination — On-Die Termination (ODT)
Process Technology — CMOS
Manufacturer — SK hynix
Family Series — H5AN4G4/8/6NBJR

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