H5AN4G8NBJR-VKC vs H5AN4G6NBJR-RDC Comparison

Detailed side-by-side comparison of H5AN4G8NBJR-VKC by SK hynix and H5AN4G6NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G8NBJR-VKC H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC ✓ Active

Specification Comparison

Parameter H5AN4G8NBJR-VKC H5AN4G6NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.40 $6.15
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gb —
Memory Organization 512M x8 —
Data Rate 2666 Mbps (DDR4-2666) —
Memory Interface Parallel —
Supply Voltage (VDD) 1.2 V —
Package FBGA-78 (7.5 x 11 mm) —
Mounting Type Surface Mount Surface Mount
Technology CMOS DRAM —
Volatile / Non-Volatile Volatile —
Operating Temperature [DATA_NEEDED: operating temperature range] —
CAS Latency [DATA_NEEDED: CAS latency for 2666 grade] —
Refresh [DATA_NEEDED: refresh rate] —
RoHS Status Compliant (Lead-Free & Halogen-Free per datasheet) —
Packaging Tray —
Lifecycle Status Active —
Density — 4 Gb
Organization — 256M x 16
Supply Voltage — 1.2 V
Interface — CMOS, fully synchronous
Package Code — TFBGA (FBGA-96)
Package Shape — Rectangular
Package Width — 7.5 mm
Number of Terminals — 96
Temperature Grade — OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet
Self Refresh — Auto / Self Refresh
Data Mask Function — Yes
Asynchronous Reset — Yes
On-Die Termination — Dynamic ODT
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Lead-Free / Halogen-Free — Yes (per datasheet cover: Lead-Free & Halogen-Free)
Speed Grade — -RDC (see manufacturer datasheet for validated data-rate bin)

Datasheets & Resources

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