H5AN4G8NBJR-VKC vs H5AN4G6NBJR-RDC 对比
详细并排对比 H5AN4G8NBJR-VKC 出自 SK hynix 和 H5AN4G6NBJR-RDC 出自 SK hynix。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN4G8NBJR-VKC | H5AN4G6NBJR-RDC |
|---|---|---|
| 品牌 | SK hynix | SK hynix |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $2.40 | $6.15 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 4 Gb | — |
| Memory Organization | 512M x8 | — |
| 数据速率 | 2666 Mbps (DDR4-2666) | — |
| Memory Interface | Parallel | — |
| Supply Voltage (VDD) | 1.2 V | — |
| 封装 | FBGA-78 (7.5 x 11 mm) | — |
| 安装类型 | Surface Mount | Surface Mount |
| Technology | CMOS DRAM | — |
| Volatile / Non-Volatile | Volatile | — |
| 工作温度 | [DATA_NEEDED: operating temperature range] | — |
| CAS 延迟 | [DATA_NEEDED: CAS latency for 2666 grade] | — |
| Refresh | [DATA_NEEDED: refresh rate] | — |
| RoHS 状态 | Compliant (Lead-Free & Halogen-Free per datasheet) | — |
| Packaging | Tray | — |
| 生命周期状态 | Active | — |
| Density | — | 4 Gb |
| 存储组织 | — | 256M x 16 |
| 电源电压 | — | 1.2 V |
| 接口 | — | CMOS, fully synchronous |
| Package Code | — | TFBGA (FBGA-96) |
| Package Shape | — | Rectangular |
| Package Width | — | 7.5 mm |
| Number of Terminals | — | 96 |
| Temperature Grade | — | OTHER (per Partstack listing); -I industrial option -40C to +95C per family datasheet |
| Self Refresh | — | Auto / Self Refresh |
| Data Mask Function | — | Yes |
| Asynchronous Reset | — | Yes |
| On-Die Termination | — | Dynamic ODT |
| ZQ Calibration | — | Yes |
| Write Leveling | — | Yes |
| CRC Function | — | Yes |
| Lead-Free / Halogen-Free | — | Yes (per datasheet cover: Lead-Free & Halogen-Free) |
| Speed Grade | — | -RDC (see manufacturer datasheet for validated data-rate bin) |