H5AN4G8NBJR-VKC vs H5AN4G8NBJR-RDC Comparison

Detailed side-by-side comparison of H5AN4G8NBJR-VKC by SK hynix and H5AN4G8NBJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN4G8NBJR-VKC H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC - 4Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN4G8NBJR-VKC ✓ Active

Specification Comparison

Parameter H5AN4G8NBJR-VKC H5AN4G8NBJR-RDC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.40 $2.95
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 4 Gb —
Memory Organization 512M x8 —
Data Rate 2666 Mbps (DDR4-2666) [DATA_NEEDED: speed grade Mbps]
Memory Interface Parallel —
Supply Voltage (VDD) 1.2 V —
Package FBGA-78 (7.5 x 11 mm) 78-ball FBGA
Mounting Type Surface Mount Surface Mount
Technology CMOS DRAM —
Volatile / Non-Volatile Volatile —
Operating Temperature [DATA_NEEDED: operating temperature range] —
CAS Latency [DATA_NEEDED: CAS latency for 2666 grade] —
Refresh [DATA_NEEDED: refresh rate] Auto-refresh and self-refresh
RoHS Status Compliant (Lead-Free & Halogen-Free per datasheet) Lead-Free & Halogen-Free (RoHS Compliant)
Packaging Tray —
Lifecycle Status Active —
Density — 4 Gbit
Organization — 512M x 8
Interface — DDR4 (Double Data Rate IV)
Supply Voltage — [DATA_NEEDED: VDD supply voltage]
Bank Architecture — 8 banks with 4 bank groups (x8)
Temperature Grade — [DATA_NEEDED: operating temperature range]
Termination — On-Die Termination (ODT)
Process Technology — CMOS
Manufacturer — SK hynix
Family Series — H5AN4G4/8/6NBJR

Datasheets & Resources

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