H5AN8G6NCJR-PBC vs H5AN8G6NAFR-PBC Comparison

Detailed side-by-side comparison of H5AN8G6NCJR-PBC by SK hynix and H5AN8G6NAFR-PBC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NAFR-PBC H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC - 8Gb DDR4 SDRAM 1.2V TFBGA-96 | SK hynix

H5AN8G6NAFR-PBC ✓ Active

Specification Comparison

Parameter H5AN8G6NCJR-PBC H5AN8G6NAFR-PBC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $3.30 $3.55
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Organization 8Gb x16 (512M x 16) —
Memory Size 8 Gbit —
Data Rate [DATA_NEEDED: exact speed grade of -PBC suffix] —
Family Data Rate Range Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) —
Supply Voltage (VDD) 1.2 V —
Package FBGA-96 (96-ball fine-pitch BGA) TFBGA-96 (rectangular)
Mounting Type Surface Mount Surface Mount
Operating Temperature 0C to +95C [DATA_NEEDED: operating temperature range]
Interface Parallel, synchronous to both clock edges —
Auto Self-Refresh Yes —
Auto Precharge Yes —
Asynchronous Reset Yes —
Data Mask Function Yes —
Write Leveling Yes —
CRC Function Yes —
Dynamic On-Die Termination (ODT) Yes —
ZQ Calibration Yes —
Lead-Free / Halogen-Free Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) —
RoHS Status Compliant Compliant (Lead-Free & Halogen-Free)
Density — 8 Gbit
Organization — 512M x 16
VDD Supply Voltage — 1.20 V +/- 0.06 V
VDDQ Supply Voltage — 1.20 V +/- 0.06 V
VPP Supply Voltage — 2.5 V +0.25/-0.125 V
Interface Type — DDR4 (parallel, double data rate)
Speed Bins Supported — DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables)
Refresh — Auto / Self Refresh
DLL — DLL ON mode for speed bin operation
Clock — Differential clock (CK/CK#)
Number of Terminals — 96
Composition — CMOS

Datasheets & Resources

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