SK hynix

H5AN8G6NCJR-PBC - 8Gb DDR4 SDRAM 2666Mbps FBGA-96 | SK hynix

MPN: H5AN8G6NCJR-PBC ✓ Active
In Stock Ships in 1-3 business days
1.2 V Vdss FBGA-96 (96-ball fine-pitch BGA) Package DDR4 SDRAM Memory
From $3.3 USD / Unit
MOQ: 1 |
Price updated: 2026-09-04
Volume Pricing
Qty Unit Price Extended
1 $4.65 $4.65
10 $4.3 $43.00
100 $3.95 $395.00
500 $3.6 $1,800.00
1,000 $3.3 $3,300.00
ℹ️ All prices are in USD

Drop-in alternatives for H5AN8G6NCJR-PBC — same package, pin-to-pin compatible. Different-package parts requiring PCB rework are excluded.

Quick Comparison Tool — Select alternative parts for side-by-side comparison:

H5AN8G6NAFR-PBC

✅ Drop-In ⚠️ 参数待验证
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gbit · 512M x 16 · 1.20 V +/- 0.06 V · 1.20 V +/- 0.06 V · 2.5 V +0.25/-0.125 V · DDR4 (parallel, double data rate) · DDR4-1600 / 1866 / 2133 / 2400 (datasheet speed bin tables)

✓ In Stock

$3.55 / Unit

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H5AN8G6NAFR-VKC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · CMOS · FBGA-96 (PBGA96) · -VKC (DDR4-2666 class, per SK Hynix part numbering) · Up to 2666 MT/s (per -VKC speed code)

✓ In Stock

$6.25 / Unit

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H5AN8G6NAFR-UHC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · 2400 MT/s · FBGA-96 · 0°C to +85°C · 96

✓ In Stock

$0.12 / Unit

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H5AN8G6NAFR-RDC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 1.2 V · DDR4 (JEDEC-standard) · Multi Bank Page Burst · TFBGA · Rectangular

✓ In Stock

$3.05 / Unit

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H5AN8G6NCJR-VKC

✅ Drop-In
SK hynix
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 2666 Mbps · 1.2 V (1.14V to 1.26V) · 0°C to +95°C · FBGA-96 · 28 mA

✓ In Stock

$60 / Unit

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K4A8G165WC-BCRC

✅ Drop-In
Samsung Electronics
📦 FBGA-96
DDR4 SDRAM · 8 Gb · 512M x 16 · 2400 Mbps · 1.2 V (1.14V to 1.26V) · 2.5 V · 0°C to +95°C (case) · 96-ball FBGA (9mm x 13mm)

✓ In Stock

$23 / Unit

View Datasheet →

H5AN8G6NCJR-PBC Maximum Ratings & Electrical Characteristics

Memory Type DDR4 SDRAM
Memory Organization 8Gb x16 (512M x 16)
Memory Size 8 Gbit
Family Data Rate Range Up to 2666 Mbps (family: H5AN8G6NCJR-xxC)
Supply Voltage (VDD) 1.2 V
Package FBGA-96 (96-ball fine-pitch BGA)
Mounting Type Surface Mount
Operating Temperature 0C to +95C
Interface Parallel, synchronous to both clock edges
Auto Self-Refresh Yes
Auto Precharge Yes
Asynchronous Reset Yes
Data Mask Function Yes
Write Leveling Yes
CRC Function Yes
Dynamic On-Die Termination (ODT) Yes
ZQ Calibration Yes
Lead-Free / Halogen-Free Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant)
RoHS Status Compliant

H5AN8G6NCJR-PBC fbga-96 (96-ball fine-pitch bga) Pin Configuration Guide

Complete pinout information for H5AN8G6NCJR-PBC (fbga-96 (96-ball fine-pitch bga) package). This digital IC includes GPIO, communication interfaces (UART, SPI, I2C), and power pins. Refer to the manufacturer datasheet for alternate pin functions and configuration options. Essential for embedded system design and PCB layout.

fbga-96 (96-ball fine-pitch bga) package pinout diagram for H5AN8G6NCJR-PBC

No detailed pinout data available for H5AN8G6NCJR-PBC.

Refer to the datasheet for full pin configuration.

Safe Operating Area (SOA) & Thermal Characteristics

Safe Operating Area Chart Default safe operating area chart for H5AN8G6NCJR-PBC Drain-to-Source Voltage (Vds) Drain Current (Id)

No official SOA curve available for this digital IC. Always operate within absolute maximum ratings specified in the datasheet. Ensure adequate cooling and derate as needed.

Typical Applications

H5AN8G6NCJR-PBC is suitable for 6 applications: Embedded PC / Industrial Motherboard Main Memory, Networking Equipment Line Cards, Set-Top Box and Smart TV Platforms, Edge AI and Vision Modules, Test and Measurement Instruments, Automotive-Adjacent Infotainment and Telematics (Non-AEC).

🏭

Embedded PC / Industrial Motherboard Main Memory

Industrial motherboards and embedded PC platforms use soldered-down DDR4 for shock/vibration reliability and lower profile than SO-DIMMs. The H5AN8G6NCJR-PBC supplies 1 GB per x16 device at up to 2666 Mbps, letting a single 16-bit controller channel reach roughly 4.2 GB/s of peak bandwidth. Its auto self-refresh preserves memory contents in S3/S4 low-power states, and the asynchronous reset pin simplifies power-rail sequencing recovery after watchdog resets. With 0C to +95C operation, it suits fanless enclosures; designers should validate thermal margin at maximum sustained bandwidth since DDR4 IDD scales with utilization.

🌐

Networking Equipment Line Cards

Switch, router, and gateway line cards require packet-buffer memory with high random-access bandwidth and deterministic refresh behavior. The H5AN8G6NCJR-PBC's bank-group architecture sustains back-to-back accesses at 2666 Mbps per pin, while write leveling and dynamic ODT maintain signal integrity on fly-by-routed address/command buses common in multi-DRAM networking layouts. CRC and CA parity on DDR4 help detect link-level errors in electrically noisy chassis. For deep packet buffering, populate multiple devices across a 64-bit controller; for control-plane memory, a single x16 chip at 1 GB is often sufficient.

📺

Set-Top Box and Smart TV Platforms

STB and smart-TV SoCs with 16-bit DDR4 controllers pair naturally with one H5AN8G6NCJR-PBC per box, providing 1 GB for video decode buffers, UI frame stores, and applications at minimal BOM cost. The device's ZQ calibration keeps output impedance matched across temperature, critical for long FPC or PCB traces to display-oriented SoCs, and data-mask enables efficient partial-frame writes. Its auto precharge reduces controller command overhead in sequential video-stream access patterns. At 1.2V, memory power stays low enough for energy-star compliant consumer products operating continuously in living-room thermal environments.

🧩

Edge AI and Vision Modules

Edge-AI accelerator modules and smart-camera SoMs need dense, high-bandwidth working memory for frame buffers and intermediate tensor storage. The H5AN8G6NCJR-PBC's 2666 Mbps x16 interface delivers the streaming bandwidth that CNN pipelines demand, and its CRC function protects data integrity during long high-utilization inference bursts. Soldering the DRAM on-module (versus DIMM) improves mechanical robustness for mobile robots and drones. System designers should budget module-level power for simultaneous DRAM streaming plus NPU load, and enable self-refresh between inference frames to cut average power in battery-powered deployments.

🔧

Test and Measurement Instruments

Oscilloscopes, logic analyzers, and arbitrary waveform generators use DDR4 as deep acquisition memory, capturing long record lengths at high sample rates. The H5AN8G6NCJR-PBC offers 1 GB per chip; instrument front ends typically build multi-Gbyte pools from 16 or 32 devices on 64-bit plus chip-select channels. Write leveling and per-byte ODT tuning ensure timing margin across the long, heavily loaded DDR4 buses typical of instrument mainframes, while the asynchronous reset enables deterministic reinitialization between acquisition sessions. Verify refresh-tck scheduling so it does not perturb sustained streaming-capture bandwidth specifications.

🚗

Automotive-Adjacent Infotainment and Telematics (Non-AEC)

Commercial-temperature infotainment and telematics units built on DDR4-based SoCs use the H5AN8G6NCJR-PBC for navigation maps, media buffering, and connectivity stacks. Its 0C to +95C window covers cabin environments, and auto self-refresh keeps navigation state alive across ignition-off standby with the 1.2V rail maintained. For under-dash locations lacking forced airflow, derate sustained bandwidth according to the thermal analysis, since DRAM self-heating concentrates near the die center of the FBGA-96. Production automotive programs requiring AEC-Q100 should instead qualify SK hynix automotive-grade DDR4 SKUs explicitly.

What is the H5AN8G6NCJR-PBC and what are its key specifications?
The H5AN8G6NCJR-PBC is an SK hynix 8Gb DDR4 SDRAM organized as x16, supplied at 1.2V in a 96-ball FBGA package rated from 0C to +95C. Key functions include auto self-refresh, auto precharge, asynchronous reset, data mask, write leveling, CRC, dynamic ODT, and ZQ calibration. According to the SK hynix H5AN8G6NCJR family datasheet, these 8Gb devices target main-memory applications requiring large density and high bandwidth, with data rates up to 2666 Mbps across the -xxC family.
What package does the H5AN8G6NCJR-PBC use and what is the pin count?
The H5AN8G6NCJR-PBC uses a 96-ball FBGA (fine-pitch ball grid array) package, confirmed by LCSC and Lisleapex product listings for the family. This is the standard footprint for 8Gb x16 DDR4 SDRAM components and is shared across the H5AN8G4/8G8/8G6 NCJR variants, so a PCB designed for one family member accepts the others. The package is lead-free and halogen-free, surface-mountable with standard reflow profiles, and uses standard DDR4 memory ball mapping.
What is the operating voltage of the H5AN8G6NCJR-PBC?
The H5AN8G6NCJR-PBC operates from a 1.2V core supply, the JEDEC-standard DDR4 voltage, down from 1.35V for DDR3L and 1.5V for DDR3. Per the family datasheet, this reduction significantly lowers memory subsystem power, which matters in fanless embedded systems and dense server configurations. VDDQ I/O power is also 1.2V; always verify the exact VDD/VDDQ tolerance windows in the manufacturer datasheet before power-supply design.
Is the H5AN8G6NCJR-PBC RoHS compliant?
Yes, the H5AN8G6NCJR family is lead-free and halogen-free and RoHS compliant, as stated in the SK hynix 8Gb DDR4 SDRAM family datasheet title (Lead-Free & Halogen-Free, RoHS Compliant). Distributor listings such as Lisleapex also flag the part as ROHS. For formal documentation such as REACH statements or conflict-minerals reports, request the latest compliance package directly from SK hynix, as certificates are updated per production site and date code.
What is the difference between H5AN8G6NCJR-PBC and H5AN8G6NCJR-VKC?
The core silicon is the same 8Gb x16 DDR4 die; the suffix letters encode speed grade, operating temperature range, and package/detail options. The -VKC variant is documented as a 2666 Mbps DDR4 part with 0C to +95C operation (per LCSC and Octopart listings). The -PBC suffix denotes a different speed/option code within the same NCJR family. Both share the FBGA-96 footprint, but you must confirm the exact -PBC data rate in the official SK hynix ordering-information table before substituting.
What is the best drop-in replacement for H5AN8G6NCJR-PBC?
The best drop-in replacements are same-family SK hynix parts: H5AN8G6NAFR-PBC (same speed code, thinner AFR package variant), H5AN8G6NAFR-VKC, and other H5AN8G6NCJR/NAFR suffix codes that match the -PBC speed grade. All use the same 8Gb x16 organization and FBGA-96 footprint. Cross-brand, the Samsung K4A8G165WC series is an 8Gb x16 DDR4 in a compatible 96-ball footprint widely used as an alternate source. Verify speed grade (2666 vs 2400 Mbps) and temperature code before committing a substitution to production.
Can Samsung K4A8G165WC replace SK hynix H5AN8G6NCJR?
Yes, the Samsung K4A8G165WC series (e.g., K4A8G165WC-BCRC, 8Gb x16 DDR4-2666) is a cross-brand drop-in equivalent for the SK hynix H5AN8G6NCJR family: both are 8Gb x16 DDR4 SDRAMs in the 96-ball FBGA footprint with JEDEC-standard DDR4 ball mapping and 1.2V operation. Before swapping, verify that the Samsung speed suffix matches or exceeds the -PBC data rate, and re-run memory-controller training, since ODT, drive-strength, and latency defaults differ slightly between vendors.
H5AN8G6NCJR-PBC vs H5AN8G8NCJR-PBC - which should I choose?
Choose based on bus width: the 8G6 is organized x16 while the 8G8 is x8. One x16 device provides a complete 16-bit channel, whereas two x8 devices give a 16-bit channel with dual rank potential and chip-select granularity. For controllers with a 16-bit DDR4 interface and single-chip memory (industrial boards, set-top boxes), the 8G6 is simpler. For DIMM-like or rank-switchable designs needing x8 parts, choose H5AN8G8NCJR-PBC. Both share 8Gb density, 1.2V, and compatible FBGA footprints within their respective x8/x16 ball maps.
When should I choose the H5AN8G6NCJR-PBC over an NAFR variant?
The NCJR and NAFR suffixes indicate different package thickness/outline options within the same 8Gb x16 DDR4 family; the electrical die is identical. Choose NCJR (standard-height FBGA-96) for conventional soldered-down designs with normal clearance, and choose NAFR variants when board-to-board stacking or low-profile enclosures demand the thinner outline. Confirm the exact package drawings in the SK hynix datasheet, and check second-source availability for whichever outline your enclosure constrains, since stock levels differ between the two.
Where can I buy H5AN8G6NCJR-PBC and what is the price?
The H5AN8G6NCJR family is available through distributors such as LCSC (which lists the family, e.g. H5AN8G6NCJR-VKC around $35.16 with 20 in stock as of the LCSC listing date) and aggregator DigiPart, which tracks price and stock across distributors for H5AN8G6NCJR. XAIPART lists tier pricing as of 2026-09-04 starting at $4.65 at quantity 1, decreasing to $3.30 at 1000 pieces. Because DRAM pricing moves weekly, request a current quote before ordering production volumes.
Is H5AN8G6NCJR-PBC in stock?
Stock exists for the family but varies by exact suffix. Octopart reported 14,820 pieces of the -VKC variant in stock (updated Aug 31, 2026), and LCSC showed 20 pieces of -VKC. Availability of the specific -PBC speed code should be confirmed with XAIPART or your distributor, as DRAM stock rotates quickly and speed-grade substitutions within the same family are common practice. If -PBC is out of stock, matching -VKC or -UHC codes with equal-or-faster speed grades are typical engineering substitutions.
Is the H5AN8G6NCJR-PBC suitable for industrial embedded systems?
Yes. With 0C to +95C operating range, auto self-refresh, and a commercial-grade temperature window that covers most indoor industrial environments, this 8Gb x16 DDR4 fits industrial gateways, HMIs, network appliances, and edge-compute modules. For extended-temperature designs (down to -40C), select an industrial suffix (e.g., -UH class) instead, or consult SK hynix industrial DRAM offerings. Design your controller for DDR4 fly-by/ODT training and ensure the 1.2V rail supports inrush during self-refresh exit at high temperature.
Where can I download the H5AN8G6NCJR datasheet PDF?
The SK hynix 8Gb DDR4 SDRAM family datasheet covering H5AN8G4NCJR-xxC, H5AN8G8NCJR-xxC, and H5AN8G6NCJR-xxC is available from datasheet archives such as DigChip and Alldatasheet, and links are provided on distributor product pages including LCSC. For the authoritative revision, download the current 8Gb DDR4 SDRAM datasheet directly from the SK hynix official website product pages, since archives may host superseded revisions. Always verify the ordering-information table for your exact -PBC suffix code.
Where can I find the H5AN8G6NCJR-PBC pinout?
The pinout is defined by the standard JEDEC DDR4 x16 FBGA-96 ball map and is documented in the SK hynix 8Gb DDR4 SDRAM family datasheet ball-assignment tables, which cover the H5AN8G6NCJR-xxC variants including the -PBC code. LCSC also provides a high-resolution pinout diagram and PCB land-pattern drawing on its product pages for the family. Because all family members share the same ball map, any NCJR/NAFR x16 datasheet revision shows the correct ball assignments for this part.
Hey Google, what can replace H5AN8G6NCJR-PBC in my design?
Direct replacements are other SK hynix 8Gb x16 DDR4 parts in FBGA-96: H5AN8G6NCJR or H5AN8G6NAFR with a matching-or-faster speed suffix (-VKC is 2666 Mbps, 0C to +95C), such as H5AN8G6NAFR-PBC or H5AN8G6NAFR-VKC. Cross-brand drop-ins include Samsung K4A8G165WC-BCRC and Micron 8Gb x16 DDR4 components with equal speed grade. Match three things before substitution: x16 organization, 2666 Mbps (or faster) data rate, and the 0C to +95C temperature window, then rerun memory training in firmware.
What is the best Samsung equivalent for H5AN8G6NCJR-PBC?
The closest Samsung equivalent is the K4A8G165WC series, specifically K4A8G165WC-BCRC (8Gb x16 DDR4-2666, 0C to +95C, FBGA-96 footprint). It matches the SK hynix part on organization, voltage (1.2V), data rate, and JEDEC x16 DDR4 ball mapping, making it a true drop-in alternate for dual-sourcing. The -BCPB, -BCTD, and -BCWE suffixes cover other speed grades - choose the suffix whose speed class meets or exceeds the -PBC rating and re-qualify memory-controller training on the new vendor's mode-register defaults.
What are the power and thermal considerations for the H5AN8G6NCJR-PBC?
Power draw depends strongly on access patterns: activate-to-precharge (ACT/PRE) streams at 2666 Mbps consume the most power, while self-refresh idle current is minimal, so estimate with SK hynix or Micron DDR4 power calculators using your actual read/write/refresh mix. At 1.2V, ensure the VRM can handle peak IDD during concurrent bank operation and provide solid 1.2V decoupling (bulk plus 0402 ceramics at each ball cluster). Thermal dissipation is modest for a single 8Gb die, but verify junction temperature stays under the 95C limit in enclosed products with no airflow.

Engineering reference data for H5AN8G6NCJR-PBC — comparison, design guidance, and compliance information.

Selection Guide

Choose the H5AN8G6NCJR-PBC when your controller has a 16-bit DDR4 interface and you need 1 GB of soldered-down main memory at commercial temperature (0C to +95C). Pick the H5AN8G6NAFR-PBC instead if enclosure height forces a thin package, or H5AN8G6NAFR-UHC when the product must survive -40C industrial cold. Select H5AN8G8NCJR-PBC (x8) when you need rank interleaving or a 64-bit multi-chip channel, accepting two chips per 16 bits. For dual-sourcing resilience without redesign, qualify Samsung K4A8G165WC-BCRC, which matches density, organization, speed (2666 Mbps), and the FBGA-96 footprint. Always verify the exact -PBC speed grade in the SK hynix ordering table and rerun memory-controller training after any vendor or suffix change; a slower suffix will not close timing on a 2666 Mbps design.

Comparison with Alternatives

Parameter This Product H5AN8G6NAFR-PBC H5AN8G6NCJR-VKC K4A8G165WC-BCRC
Package FBGA-96 FBGA-96 (AFR thin outline) FBGA-96 - same FBGA-96 (JEDEC x16 map)
Brand SK Hynix SK Hynix SK Hynix Samsung Electronics
Density 8 Gbit 8 Gbit 8 Gbit 8 Gbit
Organization x16 x16 x16 x16
Interface Voltage 1.2 V (DDR4) 1.2 V 1.2 V 1.2 V
Speed Class [DATA_NEEDED: -PBC exact speed grade] [DATA_NEEDED] 2666 Mbps 2666 Mbps
Operating Temperature 0C to +95C 0C to +95C 0C to +95C 0C to +95C
Package Outline Standard height (NCJR) Thin (AFR) Standard height - same Standard height
Unit Price (qty 1, as of 2026-09-04) $4.65 [DATA_NEEDED] $35.16 (LCSC, 20 pcs stock) [DATA_NEEDED]

Key Differentiators

  • Complete single-chip 16-bit channel (vs H5AN8G8NCJR-PBC)
  • Thin-outline same-die variant available (vs H5AN8G6NAFR-PBC)
  • Cross-brand dual-source at identical footprint (vs K4A8G165WC-BCRC)

Design Notes

DDR4 x16 fly-by routing requires clock/address/command length matching within the controller datasheet window, typically referenced to CK/CK# at the last DRAM. Keep DQ/DM/DQS length matched per byte lane and route over a continuous reference plane. Place the H5AN8G6NCJR-PBC within roughly 50 mm of the controller for single-load x16 channels; for multi-drop, use the controller's write-leveling support (this device supports it) to compensate per-DRAM flight-time skew.

Provide a dedicated 1.2V rail with bulk capacitance plus local 0402/0603 ceramics at each VDD/VDDQ ball cluster to handle simultaneous switching output noise at 2666 Mbps. Follow the controller vendor's power-ramp sequencing between VDD, VDDQ, and VPP, and use the asynchronous reset pin (RESET#) held low during power-up to prevent bus contention. Estimated: a single 8Gb device streaming at 2666 Mbps can draw hundreds of milliamps transiently - size the VRM for worst-case read-modify-write bursts, not average current.

Do not substitute DDR4 speed suffixes without verifying the ordering-information table: -PBC, -VKC, -UHC, and -RDC encode different speed and temperature codes, and a slower grade will fail timing-closure at 2666 Mbps controllers. Also update firmware memory training when swapping vendors (SK hynix vs Samsung), since drive-strength and ODT defaults differ; most bootloaders auto-train, but fixed register settings will break. Confirm package outline (NCJR standard vs NAFR thin) against enclosure clearance before layout release.

Compliance Information

RoHS
Compliant
REACH
Unknown
AEC-Q100
Not Applicable
Lead Free
Yes
Halogen Free
Yes
Conflict Minerals
Unknown

Family datasheet title states Lead-Free & Halogen-Free (RoHS Compliant); Lisleapex listing flags ROHS. REACH and conflict-minerals declarations must be requested from SK hynix.

Data verified on: 2026-09-04 — data verified and curated by XAIPART's component engineering team

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Related Components & Terms

SK Hynix H5AN8G6NCJR-PBC H5AN8G6NCJR-VKC H5AN8G6NAFR-PBC H5AN8G8NCJR-PBC K4A8G165WC-BCRC Samsung Electronics DDR4 SDRAM Double Data Rate IV DRAM FBGA-96 fine-pitch ball grid array 1.2V VDD 2666 Mbps auto self-refresh write leveling CRC on-die termination (ODT) ZQ calibration RoHS lead-free halogen-free main memory embedded DRAM memory x16 organization
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