H5AN8G6NCJR-PBC vs K4A8G165WC-BCRC Comparison
Detailed side-by-side comparison of H5AN8G6NCJR-PBC by SK hynix and K4A8G165WC-BCRC by Samsung Electronics. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NCJR-PBC | K4A8G165WC-BCRC |
|---|---|---|
| Brand | SK hynix | Samsung Electronics |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $3.30 | $23.00 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Organization | 8Gb x16 (512M x 16) | — |
| Memory Size | 8 Gbit | — |
| Data Rate | [DATA_NEEDED: exact speed grade of -PBC suffix] | 2400 Mbps |
| Family Data Rate Range | Up to 2666 Mbps (family: H5AN8G6NCJR-xxC) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (1.14V to 1.26V) |
| Package | FBGA-96 (96-ball fine-pitch BGA) | 96-ball FBGA (9mm x 13mm) |
| Mounting Type | Surface Mount | Surface Mount |
| Operating Temperature | 0C to +95C | 0°C to +95°C (case) |
| Interface | Parallel, synchronous to both clock edges | 16-bit I/O |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Asynchronous Reset | Yes | — |
| Data Mask Function | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Dynamic On-Die Termination (ODT) | Yes | — |
| ZQ Calibration | Yes | — |
| Lead-Free / Halogen-Free | Yes (family datasheet: Lead-Free & Halogen-Free, RoHS compliant) | — |
| RoHS Status | Compliant | — |
| Density | — | 8 Gb |
| Organization | — | 512M x 16 |
| VPP Voltage | — | 2.5 V |
| Banks | — | 16 (4 bank groups) |
| Burst Length | — | 8 (BL8) |
| CAS Latency | — | Programmable (e.g., 16, 17, 18) |
| Refresh | — | Temperature-compensated self-refresh (TCSR) |
| RoHS | — | Compliant |