H5AN8G6NDJR-UHC vs H5AN8G6NAFR-UHC Comparison

Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and H5AN8G6NAFR-UHC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G6NDJR-UHC H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC - 8Gb DDR4 SDRAM 3200Mbps | SK Hynix

H5AN8G6NDJR-UHC ✓ Active
SK hynix
H5AN8G6NAFR-UHC H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC - 8Gb DDR4 SDRAM 2400MT/s | SK Hynix

H5AN8G6NAFR-UHC ✓ Active

Specification Comparison

Parameter H5AN8G6NDJR-UHC H5AN8G6NAFR-UHC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Memory Type DDR4 SDRAM DDR4 SDRAM (CMOS)
Density 8 Gb —
Organization 512M x 16 512M x 16
Speed Grade 3200 Mbps (PC4-25600) —
Supply Voltage (VDD) 1.2 V —
Supply Voltage (VDDQ) 1.2 V —
Number of Terminals 96 —
Package FBGA-96 (13x7.5 mm) 96-ball FBGA (TFBGA)
Package Shape RECTANGULAR —
JESD-30 Code R-PBGA-B96 —
Maximum Operating Temperature 85 °C —
Minimum Operating Temperature 0 °C —
RoHS Compliant —
Lead-Free Yes —
Halogen Free Yes —
Additional Features Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling —
Memory Density — 8 Gbit
Supply Voltage — 1.2 V
Data Rate — 2400 MT/s
Clock Architecture — Differential clock (CK_t / CK_c), fully synchronous
Mounting Type — Surface Mount
Operating Temperature — 0C to +85C
Refresh — Auto self-refresh
Precharge — Auto precharge function
Reset — Asynchronous reset function
Data Mask — DM function supported
Termination — Dynamic on-chip termination (ODT)
Calibration — ZQ calibration function
Error Checking — CRC function
Write Leveling — Write leveling function supported
RoHS Status — [DATA_NEEDED: RoHS status]

Datasheets & Resources

Browse All Products Create BOM Request Quote