H5AN8G6NDJR-UHC vs H5AN8G6NDJR-XNC Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-UHC by SK hynix and H5AN8G6NDJR-XNC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G6NDJR-UHC | H5AN8G6NDJR-XNC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Unit Price (USD) | — | $55.68 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Density | 8 Gb | — |
| Organization | 512M x 16 | — |
| Speed Grade | 3200 Mbps (PC4-25600) | — |
| Supply Voltage (VDD) | 1.2 V | 1.2 V (max 1.26 V) |
| Supply Voltage (VDDQ) | 1.2 V | — |
| Number of Terminals | 96 | 96 |
| Package | FBGA-96 (13x7.5 mm) | FBGA-96 (13x7.5 mm) |
| Package Shape | RECTANGULAR | — |
| JESD-30 Code | R-PBGA-B96 | — |
| Maximum Operating Temperature | 85 °C | 85 °C |
| Minimum Operating Temperature | 0 °C | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | Yes |
| Halogen Free | Yes | Yes |
| Additional Features | Auto/Self Refresh, Auto Precharge, Asynchronous Reset, Data Mask, Dynamic ODT, ZQ Calibration, CRC, Write Leveling | — |
| Memory Size | — | 8 Gb |
| Memory Organization | — | 512M x16 |
| Data Rate | — | 3200 Mbps |
| Input/Output Type | — | COMMON |
| Auto Self-Refresh | — | Yes |
| Auto Precharge | — | Yes |
| Data Mask | — | Yes |
| Dynamic On-Chip Termination | — | Yes |
| ZQ Calibration | — | Yes |
| CRC Function | — | Yes |
| Write Leveling | — | Yes |
| Asynchronous Reset | — | Yes |