H5AN8G6NDJR-XNC vs AS4C512M16D4A-62BIN Comparison
Detailed side-by-side comparison of H5AN8G6NDJR-XNC by SK hynix and AS4C512M16D4A-62BIN by Alliance Memory. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Alliance Memory
AS4C512M16D4A-62BIN - 8Gb DDR4 SDRAM 512Mx16 | Alliance Memory
AS4C512M16D4A-62BIN ✓ ActiveSpecification Comparison
| Parameter | H5AN8G6NDJR-XNC | AS4C512M16D4A-62BIN |
|---|---|---|
| Brand | SK hynix | Alliance Memory |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $55.68 | $8.10 |
| Memory Type | DDR4 SDRAM | DDR4 SDRAM |
| Memory Size | 8 Gb | 8 Gbit |
| Memory Organization | 512M x16 | — |
| Data Rate | 3200 Mbps | 3200 Mbps per pin |
| Supply Voltage (VDD) | 1.2 V (max 1.26 V) | — |
| Package | FBGA-96 (13x7.5 mm) | 96-FBGA (7.5x13mm) |
| Number of Terminals | 96 | — |
| Maximum Operating Temperature | 85 °C | — |
| Input/Output Type | COMMON | — |
| RoHS | Compliant | Compliant |
| Lead-Free | Yes | — |
| Halogen Free | Yes | — |
| Auto Self-Refresh | Yes | — |
| Auto Precharge | Yes | — |
| Data Mask | Yes | — |
| Dynamic On-Chip Termination | Yes | — |
| ZQ Calibration | Yes | — |
| CRC Function | Yes | — |
| Write Leveling | Yes | — |
| Asynchronous Reset | Yes | — |
| Organization | — | 512M x 16 |
| Clock Rate | — | 1600 MHz |
| Supply Voltage | — | 1.14V ~ 1.26V (nominal 1.2V) |
| Operating Temperature | — | -40°C to +95°C |
| Interface | — | POD (Pseudo Open Drain) |
| CAS Latency | — | Programmable (e.g., 22 cycles) |
| Burst Length | — | 8 (with burst chop 4) |
| Refresh | — | Auto-refresh and self-refresh |
| Mounting Type | — | Surface Mount |
| Lead Free | — | Yes |