H5AN8G8NCJR-RDC vs H5AN8G8NCJR-VKC Comparison

Detailed side-by-side comparison of H5AN8G8NCJR-RDC by SK hynix and H5AN8G8NCJR-VKC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NCJR-RDC H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC - 8Gb DDR4 SDRAM x8 2666Mbps | SK Hynix

H5AN8G8NCJR-RDC ✓ Active
SK hynix
H5AN8G8NCJR-VKC H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC - 8Gb DDR4-2666 SDRAM x8 | SK hynix

H5AN8G8NCJR-VKC ✓ Active

Specification Comparison

Parameter H5AN8G8NCJR-RDC H5AN8G8NCJR-VKC
Brand SK hynix SK hynix
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $2.70 $28.13
Memory Type DDR4 SDRAM DDR4 SDRAM (volatile)
Density 8 Gb (1 GB) —
Organization x8 —
Data Rate up to 2666 Mbps 2666 Mbps/pin
Supply Voltage 1.2 V (VDD) —
Interface DDR4 (JEDEC standard) Parallel (DDR4)
Bank Architecture 4 bank groups x 4 banks —
Burst Length BL8 —
Package 78-ball FBGA FBGA-78 (78-ball fine-pitch BGA)
Mounting Type Surface Mount Surface Mount
Operating Temperature [DATA_NEEDED: operating temperature range for -RDC suffix] 0C to +85C
CAS Latency [DATA_NEEDED: CAS latency for -RDC speed grade] [DATA_NEEDED: CAS Latency]
Generation C-die family (NCJR) —
Lead Free Yes —
Halogen Free Yes —
RoHS Status Compliant Compliant
Memory Size — 8 Gbit
Memory Organization — 1G x 8
Clock Frequency — 1.6 GHz
Supply Voltage (VDD) — 1.14 V to 1.26 V (1.2 V class)
Operating Current (typ) — 30 mA
Standby Current (typ) — 3 mA
Auto Self-Refresh — Yes
Data Mask Function — Yes
Dynamic On-Chip Termination (ODT) — Yes
Asynchronous Reset — Yes
ZQ Calibration — Yes
Write Leveling — Yes
CRC Function — Yes
Auto Precharge — Yes
Refresh Rate — [DATA_NEEDED: refresh period]

Datasheets & Resources

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