H5AN8G8NCJR-VKC vs H5AN8G8NCJR-RDC Comparison
Detailed side-by-side comparison of H5AN8G8NCJR-VKC by SK hynix and H5AN8G8NCJR-RDC by SK hynix. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.
Specification Comparison
| Parameter | H5AN8G8NCJR-VKC | H5AN8G8NCJR-RDC |
|---|---|---|
| Brand | SK hynix | SK hynix |
| Category | Memory ICs | Memory ICs |
| Lifecycle Status | Active | Active |
| Stock Status | In Stock | In Stock |
| Unit Price (USD) | $28.13 | $2.70 |
| Memory Type | DDR4 SDRAM (volatile) | DDR4 SDRAM |
| Memory Size | 8 Gbit | — |
| Memory Organization | 1G x 8 | — |
| Data Rate | 2666 Mbps/pin | up to 2666 Mbps |
| Clock Frequency | 1.6 GHz | — |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (1.2 V class) | — |
| Operating Current (typ) | 30 mA | — |
| Standby Current (typ) | 3 mA | — |
| Operating Temperature | 0C to +85C | [DATA_NEEDED: operating temperature range for -RDC suffix] |
| Package | FBGA-78 (78-ball fine-pitch BGA) | 78-ball FBGA |
| Mounting Type | Surface Mount | Surface Mount |
| Interface | Parallel (DDR4) | DDR4 (JEDEC standard) |
| Auto Self-Refresh | Yes | — |
| Data Mask Function | Yes | — |
| Dynamic On-Chip Termination (ODT) | Yes | — |
| Asynchronous Reset | Yes | — |
| ZQ Calibration | Yes | — |
| Write Leveling | Yes | — |
| CRC Function | Yes | — |
| Auto Precharge | Yes | — |
| RoHS Status | Compliant | Compliant |
| CAS Latency | [DATA_NEEDED: CAS Latency] | [DATA_NEEDED: CAS latency for -RDC speed grade] |
| Refresh Rate | [DATA_NEEDED: refresh period] | — |
| Density | — | 8 Gb (1 GB) |
| Organization | — | x8 |
| Supply Voltage | — | 1.2 V (VDD) |
| Bank Architecture | — | 4 bank groups x 4 banks |
| Burst Length | — | BL8 |
| Generation | — | C-die family (NCJR) |
| Lead Free | — | Yes |
| Halogen Free | — | Yes |