H5AN8G8NDJR-XNC vs MT40A1G8SA-062E Comparison

Detailed side-by-side comparison of H5AN8G8NDJR-XNC by SK hynix and MT40A1G8SA-062E by Micron Technology. Compare key specifications, electrical parameters, packaging, lifecycle status, pricing, and availability to determine the best component for your design requirements.

SK hynix
H5AN8G8NDJR-XNC

H5AN8G8NDJR-XNC - 8Gb DDR4-3200 SDRAM | SK Hynix

H5AN8G8NDJR-XNC βœ“ Active
Micron Technology
MT40A1G8SA-062E

MT40A1G8SA-062E - 8Gb DDR4 SDRAM 3200MT/s | Micron

MT40A1G8SA-062E βœ“ Active

Specification Comparison

Parameter H5AN8G8NDJR-XNC MT40A1G8SA-062E
Brand SK hynix Micron Technology
Category Memory ICs Memory ICs
Lifecycle Status Active Active
Stock Status In Stock In Stock
Unit Price (USD) $24.50 $6.05
Memory Type DDR4 SDRAM DDR4 SDRAM
Memory Size 8 Gbit (1 G x 8) β€”
Data Rate 3200 MT/s (DDR4-3200) 3200 MT/s (DDR4-3200)
Supply Voltage (VDD) 1.14 V to 1.26 V (nominal 1.2 V) β€”
I/O Voltage (VDDQ) 1.14 V to 1.26 V (nominal 1.2 V) β€”
Operating Temperature (TC) 0Β°C to +95Β°C β€”
Package FBGA-78 (7.5 x 11 mm) 78-ball FBGA (7.5 x 11 mm)
Mounting Type Surface Mount Surface Mount
Memory Organization 1G x 8 β€”
Interface Parallel β€”
Clock Frequency 1.6 GHz (I/O clock) 1.6 GHz
RoHS Compliant β€”
Lead-Free Yes β€”
Packaging Tray β€”
Status Active β€”
Density β€” 8 Gbit
Organization β€” 1G x 8
Access Time (CAS Latency) β€” CL22 at 3200 MT/s
Row Access Time β€” 19 ns
VDD / VDDQ β€” 1.2 V +/-60 mV
VPP β€” 2.5 V, -125 mV, +250 mV
Internal Banks β€” 16 banks (4 bank groups x 4 banks)
Refresh β€” 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C)
Operating Temperature β€” 0C to +95C (CT range; IT: -40C to +95C)
I/O Type β€” 1.2 V pseudo open-drain
Burst Length β€” BL8, BC4 (burst chop)
Features β€” Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ

Datasheets & Resources

Browse All Products Create BOM Request Quote