H5AN8G8NDJR-XNC vs MT40A1G8SA-062E 对比
详细并排对比 H5AN8G8NDJR-XNC 出自 SK hynix 和 MT40A1G8SA-062E 出自 Micron Technology。对比关键规格、电气参数、封装、生命周期状态、价格和供货情况，以确定最适合您设计需求的元器件。
规格对比
| 参数 | H5AN8G8NDJR-XNC | MT40A1G8SA-062E |
|---|---|---|
| 品牌 | SK hynix | Micron Technology |
| 分类 | Memory ICs | Memory ICs |
| 生命周期状态 | 有效 | 有效 |
| 库存状态 | 有库存 | 有库存 |
| 单价（USD） | $24.50 | $6.05 |
| 存储器类型 | DDR4 SDRAM | DDR4 SDRAM |
| 存储容量 | 8 Gbit (1 G x 8) | — |
| 数据速率 | 3200 MT/s (DDR4-3200) | 3200 MT/s (DDR4-3200) |
| Supply Voltage (VDD) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| I/O Voltage (VDDQ) | 1.14 V to 1.26 V (nominal 1.2 V) | — |
| Operating Temperature (TC) | 0°C to +95°C | — |
| 封装 | FBGA-78 (7.5 x 11 mm) | 78-ball FBGA (7.5 x 11 mm) |
| 安装类型 | Surface Mount | Surface Mount |
| Memory Organization | 1G x 8 | — |
| 接口 | Parallel | — |
| Clock Frequency | 1.6 GHz (I/O clock) | 1.6 GHz |
| RoHS | Compliant | — |
| Lead-Free | Yes | — |
| Packaging | Tray | — |
| Status | Active | — |
| Density | — | 8 Gbit |
| 存储组织 | — | 1G x 8 |
| Access Time (CAS Latency) | — | CL22 at 3200 MT/s |
| Row Access Time | — | 19 ns |
| VDD / VDDQ | — | 1.2 V +/-60 mV |
| VPP | — | 2.5 V, -125 mV, +250 mV |
| Internal Banks | — | 16 banks (4 bank groups x 4 banks) |
| Refresh | — | 8192-cycle; 64 ms (0-85C), 32 ms (85-95C), 16 ms (>95C) |
| 工作温度 | — | 0C to +95C (CT range; IT: -40C to +95C) |
| I/O Type | — | 1.2 V pseudo open-drain |
| Burst Length | — | BL8, BC4 (burst chop) |
| 特性 | — | Auto self-refresh, write leveling, dynamic ODT, CRC, auto precharge, ZQ calibration, on-die adjustable VREFDQ |